Zobrazeno 1 - 10
of 86
pro vyhledávání: '"M. Heyen"'
Autor:
I. Grant, F. Schulte, Marko Societe Civile S P Erman, M. Renaud, D. Schmitz, J. Le Bris, H. Jürgensen, M. Heyen, C. Steinberger
Publikováno v:
Optical and Quantum Electronics. 23:391-404
Ga x In1−x As y P1−y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26855c483d5732041c61106e43c44d79
https://doi.org/10.1007/bf00619612
https://doi.org/10.1007/bf00619612
Publikováno v:
Journal of Crystal Growth. 107:188-191
In this study we will report on the first application of gas foil rotation in low pressure systems for growth of InP and GaAs based materials. Commercial reactors could be retrofitted with compatible designed susceptors allowing single rotation and p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866aeae262e046a01cdd6515ab59d069
https://doi.org/10.1016/0022-0248(91)90454-d
https://doi.org/10.1016/0022-0248(91)90454-d
Conference
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Publikováno v:
International Conference on Indium Phosphide and Related Materials.
Further improvement of thickness and compositional homogeneity was sought in order to increase the usable wafer area for sophisticated device production and thus reduce the manufacturing costs in low-pressure metalorganic vapor-phase epitaxy processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fba868b452cafb55d626888d2c8c1ea
https://doi.org/10.1109/iciprm.1990.202997
https://doi.org/10.1109/iciprm.1990.202997
Publikováno v:
Journal of Crystal Growth. 60:297-306
In this study a general analysis of chemical vapor deposition (CVD) processes carried out in open flow systems is presented. In this treatment the successive process steps, namely mass transport in the gas phase, adsorption, chemical reaction and sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77ae2e32ed9640514404c258518ff352
https://doi.org/10.1016/0022-0248(82)90102-6
https://doi.org/10.1016/0022-0248(82)90102-6
Publikováno v:
Journal of Crystal Growth. 93:279-284
In this paper active and passive safety aspects of the new MOVPE laboratory of the University of Duisburg are discussed. The laboratory is in use since march 1987. During normal operation a spatial separation of operators and MOVPE equipment ensures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f47e1bfe88c27101579b4160ae50576a
https://doi.org/10.1016/0022-0248(88)90540-4
https://doi.org/10.1016/0022-0248(88)90540-4
Publikováno v:
IEEE Transactions on Electron Devices. 34:2043-2048
This paper describes results of a study on the monolithic integration of AlGaAs light-emitting diodes with GaAs field-effect transistors on a conductive p-GaAs substrate. Using a selective growth technique, a horizontal configuration is fabricated th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c8738c33c9b551cc161bfcbfa18a707
https://doi.org/10.1109/t-ed.1987.23197
https://doi.org/10.1109/t-ed.1987.23197
Publikováno v:
Journal of Crystal Growth. 74:292-300
This paper reports on the epitaxial growth of GaAs by means of molecular beams of Ga(CH3)3 (TMG) or Ga(C2H5)3 (TEG) and AsH3. Using TMG as the Ga source the films are p-type with carrier concentrations between 3×1019 and 3×1020 cm-3 caused by carbo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0718ae3823d293869024d309c8956d6c
https://doi.org/10.1016/0022-0248(86)90118-1
https://doi.org/10.1016/0022-0248(86)90118-1
Publikováno v:
Journal of Crystal Growth. 53:558-562
A study of the etching of GaAs at 750°C in the GaCl-HCl-AsH3-H2-He system shows that the rate increases with the HCl pressure and decreases with the GaCl, AsH3 and H2 pressures. Smooth surfaces up to high etch rates are only obtained on (100) and (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8673a2d9d0f4eccb311bfe01bb4147b3
https://doi.org/10.1016/0022-0248(81)90139-1
https://doi.org/10.1016/0022-0248(81)90139-1
Publikováno v:
Le Journal de Physique Colloques. 49:C4-209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::058ab14c5fcfad7f17edc09befbe0849
https://doi.org/10.1051/jphyscol:1988443
https://doi.org/10.1051/jphyscol:1988443