Zobrazeno 1 - 10
of 116
pro vyhledávání: '"M. Hauschildt"'
Publikováno v:
Clinical Practice in Athletic Training.
There are significant health risks associated with the female athlete triad (Triad), therefore early detection and prevention is key. Athletic trainers often serve as the frontline defense and can have a crucial role in identifying the Triad. Yet kno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80ad09097130f4a96785f00cf5c9bb25
https://doi.org/10.31622/2020/0002.3
https://doi.org/10.31622/2020/0002.3
Autor:
J. Montes, A. Goodwin, M. McDermott, D. Uher, F. Hernandez, K. Coutts, J. Cocchi, M. Hauschildt, K. Cornett, A. Rao, C. Garber, D. De Vivo
Publikováno v:
Neuromuscular Disorders. 30:S72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c2d553be748a30111fea91ac65df06f
https://doi.org/10.1016/j.nmd.2020.08.092
https://doi.org/10.1016/j.nmd.2020.08.092
Autor:
K.K.S. Tan, A. Divay, S. Morvan, L.H.K. Chan, Madabusi Govindarajan, M. T. Lau, R. Taylor, Kumaran Sundaram, Kok Wai Johnny Chew, Chi Zhang, Christoph Schwan, Andreas Huschka, Yogadissen Andee, M. Hauschildt, B. Rice, Jen Shuang Wong, Josef S. Watts, A. Bcllaouar, A. Pakfar, W. LOo, C.K. Lim, Christian Schippel, Steffen Lehmann, Zhixing Zhao, S.N. Ong, S. Embabi, David Harame, W.H. Chow, J. Mazurier, Carsten Grass, G. Workman
Publikováno v:
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This paper describes a 22nm FDSOI technology optimized for RF/mmWave applications. The offering consists of high speed mmWave FET transistors, and a thick dual copper back-end. The offering is integrated with a low power digital technology (0.4V) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4088f44dffef7844ef436b15c60fa838
https://doi.org/10.1109/rfic.2018.8429035
https://doi.org/10.1109/rfic.2018.8429035
Autor:
S. Moritz, M. Hauschildt
Publikováno v:
Der Nervenarzt. 82:281-289
Die mit Zwangsstorungen einhergehenden Beeintrachtigungen und psychosozialen Folgeprobleme sind oft vielgestaltig und einschneidend. Dabei wird das subjektive Leid von einer Zwangsstorung Betroffener uber die Symptomschwere hinaus von multidimensiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa7bc6e7b0f913158f72322819aab5f7
https://doi.org/10.1007/s00115-010-2961-4
https://doi.org/10.1007/s00115-010-2961-4
Autor:
J. Guillan, Joaquim Torres, V. Girault, R. Gras, M. Hauschildt, E. Petitprez, P. Brun, M. Gall, E. Ollier, R. Delsol, L.G. Gosset
Publikováno v:
Microelectronic Engineering. 84:2629-2633
Integration of CoWP self-aligned barriers in hybrid stack with SiCN liner in a standard 65nm technology node integration scheme faces several issues. For example, bowing of upper metal level occurs due to the interaction between CoWP and etch plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6dbb18cfd4be80f99aa184cc7bc2c93
https://doi.org/10.1016/j.mee.2007.05.019
https://doi.org/10.1016/j.mee.2007.05.019
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
M, Hauschildt, S, Moritz
Publikováno v:
Der Nervenarzt. 82(3)
The considerable restrictions and psychosocial consequences associated with obsessive-compulsive disorder (OCD) are often multiform and expansive. The subjective distress perceived by individuals with OCD is influenced by multidimensional and interin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::22bd9caf2b3bc2765091742282bb049a
https://pubmed.ncbi.nlm.nih.gov/21340637
https://pubmed.ncbi.nlm.nih.gov/21340637
Publikováno v:
AIP Conference Proceedings.
Even after the successful introduction of Cu‐based metallization, the electromigration failure risk has remained one of the important reliability concerns for advanced process technologies. The observation of strong bimodality for the electron up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4138c4a218a8eea8e0291ee0222bb08
https://doi.org/10.1063/1.3169264
https://doi.org/10.1063/1.3169264
Autor:
M. Hauschildt, M. Gall, P. Justison, R. Hernandez, M. Herrick, Shinichi Ogawa, Paul S. Ho, Ehrenfried Zschech
Publikováno v:
AIP Conference Proceedings.
Even after the successful introduction of Cu‐based metallization, the electromigration (EM) failure risk has remained one of the important reliability concerns for advanced process technologies. The main factors requiring attention are the activati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::314f414ba970de192185032a916ec98b
https://doi.org/10.1063/1.2815785
https://doi.org/10.1063/1.2815785
Autor:
P. S. Ho, S. Thrasher, Martin Gall, L. Michaelson, H. Kawasaki, R. Hernandez, M. Hauschildt, P. Justison
Publikováno v:
AIP Conference Proceedings.
Electromigration (EM) failure statistics and the origin of the lognormal standard deviation (σ) for Copper (Cu) interconnects have been investigated by analyzing the statistics of EM lifetime and void size distributions at various stages during EM t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb77b7219109295d3284380a0f6a3f8f
https://doi.org/10.1063/1.1845841
https://doi.org/10.1063/1.1845841