Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. H. Rümmeli"'
Publikováno v:
Journal of microscopy. 249(2)
For the characterization of light materials using transmission electron microscopy, a low electron acceleration voltage of 80 kV or even 60 kV is attractive due to reduced beam damage to the specimen. The concomitant reduction in resolving power of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::adc89c787b96dcdf4a78570a9cc7bc95
https://pubmed.ncbi.nlm.nih.gov/23176667
https://pubmed.ncbi.nlm.nih.gov/23176667
Autor:
S. G. Pavlov, H.-W. Hübers, M. H. Rümmeli, J. N. Hovenier, T. O. Klaassen, R. Kh. Zhukavin, A. V. Muravjov, V. N. Shastin
Publikováno v:
Towards the First Silicon Laser ISBN: 9781402011948
Terahertz silicon lasers are based on intracenter transitions of group-V donors. The peculiarities due to electron-phonon interaction and the state-of-the-art performance such as frequency tunability by stress or magnetic field are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2074e22d4171e802f9bc9cd3a91910d3
https://doi.org/10.1007/978-94-010-0149-6_29
https://doi.org/10.1007/978-94-010-0149-6_29
Autor:
P. Ayala, A. Grüneis, T. Gemming, B. Büchner, M. H. Rümmeli, D. Grimm, J. Schumann, R. Kaltofen, F. L. Freire Jr., H. D. Fonseca Filho, T. Pichler
Publikováno v:
Chemistry of Materials; Nov2007, Vol. 19 Issue 25, p6131-6137, 7p
Publikováno v:
Chemistry of Materials; Aug2007, Vol. 19 Issue 17, p4105-4107, 3p