Zobrazeno 1 - 10
of 56
pro vyhledávání: '"M. H. Pilkuhn"'
Publikováno v:
Materials Chemistry and Physics. 134:899-904
InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5c18847ba875c5002ef5d42bca128c
https://doi.org/10.1016/j.matchemphys.2012.03.087
https://doi.org/10.1016/j.matchemphys.2012.03.087
Autor:
M. H. Pilkuhn, Cheng-Tien Wan, Wei-Heng Lin, Yi-Shin Wang, Hsin-Chieh Yu, Yan-Kuin Su, Wei-Cheng Chen, Chun-Yuan Huang, Ricky W. Chuang
Publikováno v:
IEEE Electron Device Letters. 30:1155-1157
In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20abee12be03fcf24504cdc3c99ae748
https://doi.org/10.1109/led.2009.2031131
https://doi.org/10.1109/led.2009.2031131
Autor:
M. H. Pilkuhn
Publikováno v:
International Journal of Polymeric Materials. 44:305-315
Future technologies in information science will rely on structures with decreasing size and on systems with increasing complexity. The physical and technological limits of semiconductor nanostructures point to the use of molecules and atoms in inform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9140c85f9cfd885fa2576e25e14521a2
https://doi.org/10.1080/00914039908009700
https://doi.org/10.1080/00914039908009700
Publikováno v:
Journal of Applied Physics. 81:7895-7899
Carrier relaxation in self-assembled quantum dots due to Coulomb interaction with two dimensional (2D) carriers is studied theoretically. Auger coefficients for carrier relaxation rates are calculated in the dipole approximation for Coulomb interacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49ce7487aa7a0b384102b089eda34644
https://doi.org/10.1063/1.365363
https://doi.org/10.1063/1.365363
Publikováno v:
Physical Review B. 54:13440-13443
Time-resolved investigations were performed with systematic variation of the excitation energy in order to study the formation of excitons. In a proper designed shallow ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a544761b8634d92d8d91ecee788268ee
https://doi.org/10.1103/physrevb.54.13440
https://doi.org/10.1103/physrevb.54.13440
Autor:
Hsin-Chieh Yu, Chun Yuan Huang, Wei Hung Lin, M. H. Pilkuhn, Yan-Kuin Su, Cheng Tien Wan, Ricky W. Chuang, Wei-Cheng Chen
Publikováno v:
SPIE Proceedings.
High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using triethylgallium (TEGa) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::add739cf01fbadb7ea23686ed5f66918
https://doi.org/10.1117/12.841058
https://doi.org/10.1117/12.841058
Autor:
G. Lehr, Alfred Forchel, Heinz Schweizer, E. Lach, F. E. Prins, E. M. Fröhlich, J. Straka, M. H. Pilkuhn
Publikováno v:
physica status solidi (b). 173:331-337
The thermodynamic properties of quasi-one-dimensional electron--hole plasmas (1D-EHP) are studied in a wide range of wire widths. The wires are realized by implantation induced intermixing of GaAs/AlGaAs quantum wells. The 1D-EHP is analyzed with res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33263fd6ee8a7e2738fd986a0a3b5f7d
https://doi.org/10.1002/pssb.2221730132
https://doi.org/10.1002/pssb.2221730132
Publikováno v:
Applied Physics Letters. 72:58-60
We establish rate equations to describe Auger carrier capture kinetics in quantum dot structures, calculate Auger capture coefficients for self-assembled quantum dots, and analyze Auger capture kinetics using these equations. We show that Auger captu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d8bb10383940e44f25f12a1251bc17a
https://doi.org/10.1063/1.120643
https://doi.org/10.1063/1.120643
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
6 pags., 6 figs.
Field effect transistors were prepared by vacuum sublimation of the oligothiophenes DDnT and DPnT. Their electrical performance was investigated in vacuum ("in situ") and after exposure to air ("ex situ"). Their morphology was c
Field effect transistors were prepared by vacuum sublimation of the oligothiophenes DDnT and DPnT. Their electrical performance was investigated in vacuum ("in situ") and after exposure to air ("ex situ"). Their morphology was c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0678d9722ae3107bfbdc044b5671abfc
http://hdl.handle.net/10261/237839
http://hdl.handle.net/10261/237839