Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. H. M. Reddy"'
Publikováno v:
Semiconductor Science and Technology. 21:267-272
This paper describes molecular beam epitaxial growth, processing and room temperature characterization of lattice-matched GaInAsSb mid-infrared detectors on GaSb substrates for room temperature operation. For the first time, we demonstrate GaInAsSb d
Autor:
John P. Prineas, Linda J. Olafsen, J. R. Yager, T. F. Boggess, J. T. Olesberg, M. H. M. Reddy, J. L. Hicks, C. Cao, S. Seydmohamadi, Chris Coretsopoulos, Michael R. Santilli
Publikováno v:
SPIE Proceedings.
The performances of a pin versus a pn structure from GaInAsSb materials operating at room temperature are compared both from a theoretical point of view and experimentally. Theoretically, it is found in materials limited by generation-recombination c
Autor:
C. Cao, M. Maiorov, M. H. M. Reddy, Mark A. Itzler, Chris Coretsopoulos, Michael E. Flatté, J.T. Olesberg, John P. Prineas
Publikováno v:
SPIE Proceedings.
In this study, we examine processes limiting the performance of 4 micron superlattice pin photodiodes for different temperature and mesa size regimes. We show that the performance of large mesa photodiodes at low temperature is most severely limited
Publikováno v:
Applied Physics Letters. 89:211108
By cascading multiple GaInAsSb active regions, the authors have fabricated 2.4μm light-emitting diodes that, for a given light output, operate at reduced current and higher voltage, which can be advantageous for battery-powered sensor applications.