Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. H. Boukhatem"'
Autor:
M. H. Boukhatem
Publikováno v:
Silicon. 8:309-312
The carriers temperatures are calculated for each lattice temperature from 150 to 450 K for a germanium semiconductor. The effects of the electron-lattice and electron-phonon interactions are investigated and proved that the carriers temperatures are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de899c0324815033b3218cef22c83f59
https://doi.org/10.1007/s12633-015-9361-0
https://doi.org/10.1007/s12633-015-9361-0
Publikováno v:
Microelectronics Journal. 38:615-619
An analytic expression is introduced to describe the dependence of the carriers temperature with the lattice temperature. An experimental study of the temperature dependence of silicon junction characteristics leads to an experimental determination o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef76c79a26f469869fa118cb8264fa9
https://doi.org/10.1016/j.mejo.2007.02.002
https://doi.org/10.1016/j.mejo.2007.02.002
Publikováno v:
2007 International Symposium on Signals, Systems and Electronics.
This work presents a comparison between the carriers temperature and the lattice temperature for an operating silicon p-n junction. An experimental study of the temperature dependence of p-n junction current-voltage characteristics leads to an experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c1a51d60099d754e5949806fdcb3151
https://doi.org/10.1109/issse.2007.4294488
https://doi.org/10.1109/issse.2007.4294488