Zobrazeno 1 - 10
of 146
pro vyhledávání: '"M. Gurfinkel"'
Publikováno v:
Journal of Food Science Education. 16:6-9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77615054d4cd86a4a782de68bdbe8615
https://doi.org/10.1111/1541-4329.12102
https://doi.org/10.1111/1541-4329.12102
Autor:
Róisín M. Owens, Adel Hama, M. Gurfinkel, Dion Khodagholy, Erica Lanzarini, Leslie H. Jimison, Scherrine A. Tria, George G. Malliaras
Publikováno v:
Advanced Materials
Advanced Materials, Wiley-VCH Verlag, 2012, pp.24, 5919
Advanced Materials, Wiley-VCH Verlag, 2012, pp.24, 5919
The integration of an organic electrochemical transistor with human barrier tissue cells provides a novel method for assessing toxicology of compounds in vitro. Minute variations in paracellular ionic flux induced by toxic compounds are measured in r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5db750b1b765904fd935ecdf7daaee2f
https://doi.org/10.1002/adma.201202612
https://doi.org/10.1002/adma.201202612
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:476-482
On-die measurements of V DD and V SS voltages inside a 90-nm VLSI technology chip are presented. The results show local fluctuations in the V DD and V SS voltages with amplitudes that can reach, in severe cases, more than 10% of V DD. These fluctuati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abb8bbbf5c7f8e6fed753865670be43
https://doi.org/10.1109/tdmr.2009.2025955
https://doi.org/10.1109/tdmr.2009.2025955
Autor:
Greg Dunne, J.C. Horst, John S. Suehle, Joseph Bernstein, M. Gurfinkel, Kevin Matocha, Yoram Shapira, R.A. Beaupre
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:635-641
Time-dependent dielectric breakdown (TDDB) is one of the major issues concerning long-range reliability of dielectric layers in SiC-based high-power devices. Despite the extensive research on TDDB of SiO2 layers on Si, there is a lack of high-quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a195a779c501b75bf5341a600b6e4ad
https://doi.org/10.1109/tdmr.2008.2001182
https://doi.org/10.1109/tdmr.2008.2001182
Autor:
Daniel B. Habersat, Ronald Green, Aivars J. Lelis, M. Gurfinkel, J. Suehle, Aderinto Ogunniyi, Neil Goldsman
Publikováno v:
IEEE Transactions on Electron Devices. 55:1835-1840
We have observed significant instability in the threshold voltage of 4H-SiC metal-oxide-semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong measurement time dependence. For example, a 20-mus-long gate ramp used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b9889e164d8246c12ad17e15693fb2
https://doi.org/10.1109/ted.2008.926672
https://doi.org/10.1109/ted.2008.926672
Autor:
Aivars J. Lelis, Joseph Bernstein, Neil Goldsman, H.D. Xiong, Yoram Shapira, M. Gurfinkel, Daniel B. Habersat, John S. Suehle, Kin P. Cheung
Publikováno v:
IEEE Transactions on Electron Devices. 55:2004-2012
Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with thermal as-grown SiO2 and NO-annealed gate oxides have been studied using fast I-V measurements. These measurements reveal the full extent of the instability un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1930b904ce4358198fc2bc61f0f32696
https://doi.org/10.1109/ted.2008.926626
https://doi.org/10.1109/ted.2008.926626
Autor:
Aivars J. Lelis, John S. Suehle, M. Gurfinkel, Neil Goldsman, Akin Akturk, Siddharth Potbhare
Publikováno v:
IEEE Transactions on Electron Devices. 55:2061-2070
A methodology for characterizing the transient response of 4H-SiC MOSFETs has been developed. The method combines new physical models, simulation techniques, and experiment to provide insight into the details of MOSFET time-dependent dynamics. A new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f2f9b5f6c23b1d1aa7d9bc2cc92745
https://doi.org/10.1109/ted.2008.926668
https://doi.org/10.1109/ted.2008.926668
Autor:
Dawei Heh, Gennadi Bersuker, Qiliang Li, John S. Suehle, Curt A. Richter, M. Gurfinkel, Yoram Shapira, Rino Choi, H.D. Xiong
Publikováno v:
Microelectronic Engineering. 84:2230-2234
The electrically active defects in high-k/SiO"2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f28dc905b375443ceca22644ccdff525
https://doi.org/10.1016/j.mee.2007.04.094
https://doi.org/10.1016/j.mee.2007.04.094
Publikováno v:
Microelectronics Reliability. 46:1957-1979
The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are reviewed. The simulation tools and failure equivalent circuits are described. The review includes historical background as well as a new approach for accurately p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d21909bec7c4b0cbdc56436f7e4645c2
https://doi.org/10.1016/j.microrel.2005.12.004
https://doi.org/10.1016/j.microrel.2005.12.004
Publikováno v:
Applied Surface Science. 248:62-65
Measurements of photon emission and substrate current in metal-oxide-semiconductor field effect transistors at various temperatures have been carried out using electrical and NIR microscopy. The results received at room temperature have extended the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da038b28a2c836c1e182b31774e55a7a
https://doi.org/10.1016/j.apsusc.2005.03.033
https://doi.org/10.1016/j.apsusc.2005.03.033