Zobrazeno 1 - 10
of 55
pro vyhledávání: '"M. Guillermet"'
Autor:
S. Monfray, S. Guerber, A. Montagné, D. Fowler, P. Grosse, J. Planchot, D. Ristoiu, F. Baron, M. Brihoum, L. Babaud, A. Taute, E. Kempf, K. Rovayaz, P. Chantraine, S. Delmedico, F. Leverd, L. Balme, D. Pellissier, K. Haxaire, M. Guillermet, S. Mermoz, M. Hello, S. Jan, P. Chevalier, F. Boeuf
Publikováno v:
Optical Fiber Communication Conference (OFC) 2022.
In this paper we present the first integration of a 2D Optical Phased Array (OPA) for 905nm LIDAR applications on our 300mm SWIR photonic platform DAPHNE, based on Si & SiN components.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbaf3690ef8682ed787a39a000bfed76
https://doi.org/10.1364/ofc.2022.th1e.5
https://doi.org/10.1364/ofc.2022.th1e.5
Autor:
J. S. Steckel, E. Josse, A. G. Pattantyus-Abraham, M. Bidaud, B. Mortini, H. Bilgen, O. Arnaud, S. Allegret-Maret, F. Saguin, L. Mazet, S. Lhostis, T. Berger, K. Haxaire, L. L. Chapelon, L. Parmigiani, P. Gouraud, M. Brihoum, P. Bar, M. Guillermet, S. Favreau, R. Duru, J. Fantuz, S. Ricq, D. Ney, I. Hammad, D. Roy, A. Arnaud, B. Vianne, G. Nayak, N. Virollet, V. Farys, P. Malinge, A. Tournier, F. Lalanne, A. Crocherie, J. Galvier, S. Rabary, O. Noblanc, H. Wehbe-Alause, S. Acharya, A. Singh, J. Meitzner, D. Aher, H. Yang, J. Romero, B. Chen, C. Hsu, K. C. Cheng, Y. Chang, M. Sarmiento, C. Grange, E. Mazaleyrat, K. Rochereau
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ba7ab2beceb487279311b475596647
https://doi.org/10.1109/iedm19574.2021.9720560
https://doi.org/10.1109/iedm19574.2021.9720560
Autor:
Philippe Blaise, M. Barlas, Philippe Rodriguez, L. Grenouillet, L. Perniola, F. Mazen, M. Alayan, E. Jalaguier, Boubacar Traore, B. Sklenard, S. Jeannot, M. Guillermet, Elisa Vianello, E. Vilain, S. Bernasconi
Publikováno v:
ESSDERC
In this work, we study the impact of Si and Al implantation on the current conduction mechanisms and operation of 1T-1R TiN/HfO 2 /Ti/TiN based ReRAM devices. The pre-forming current and forming voltage evolution clearly reveal different trends as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566a8182db7b9f6510e909412fc2fe1a
https://doi.org/10.1109/essderc.2016.7599613
https://doi.org/10.1109/essderc.2016.7599613
Publikováno v:
ICICDT
Plasma induced damage (PID) in the Fully Depleted SOI devices was studied for two etch plasma processes. Different antenna test structures were used in order to show that plasma non-uniformity can occur between the device nodes inducing severe chargi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66fc7fd7411a6a33139925063e75ab70
https://doi.org/10.1109/icicdt.2015.7165900
https://doi.org/10.1109/icicdt.2015.7165900
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02faf0c3c83d1f93401fef742b2600ad
https://doi.org/10.1109/iitc-mam.2015.7325604
https://doi.org/10.1109/iitc-mam.2015.7325604
Autor:
S. Joblot, C. De-Buttet, Sébastien Petitdidier, F. Abbate, C. Jenny, Didier Celi, B. Ramadout, Thomas Quemerais, Sebastien Haendler, Laurent Favennec, Daniel Gloria, O. Robin, C. Richard, E. Canderle, B. Borot, K. Haxaire, N. Derrier, Remi Beneyton, Julien Rosa, G. Ribes, O. Saxod, P. Brun, Y. Campidelli, Pascal Chevalier, Cedric Durand, A. Montagne, Francois Leverd, G. Imbert, Olivier Gourhant, M. Guillermet, E. Gourvest, L. Berthier, Clement Tavernier, J. Cossalter, M. Buczko, C. Deglise, Mickael Gros-Jean, C. Julien, Jean-Damien Chapon, K. Courouble, D. Ney, G. Avenier, Patrick Maury, Y. Carminati, R. Bianchini, F. Foussadier
Publikováno v:
2014 IEEE International Electron Devices Meeting.
This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell. High Speed (HS) HBT exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a267063e241381b03eefae310424668
https://doi.org/10.1109/iedm.2014.7046978
https://doi.org/10.1109/iedm.2014.7046978
Autor:
Philippe Gayet, Vincent Arnal, M. Guillermet, Philippe Spinelli, Joaquin Torres, J. P. Reynard, C. Verove
Publikováno v:
Microelectronic Engineering. 60:143-148
The capability of CVD silicon oxide has been studied to achieve a controlled air gap between copper interconnects for sub-quarter micron CMOS technologies. Several deposition parameters have been investigated and their influence on air gap morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd7f2ee529672b242afd7c989b7ce06
https://doi.org/10.1016/s0167-9317(01)00590-1
https://doi.org/10.1016/s0167-9317(01)00590-1
Autor:
P. Blaise, Serge Blonkowski, Ch. Muller, E. Vianello, H. Grampeix, S. Jeannot, M. Guillermet, E. Jalaguier, G. Molas, Marc Bocquet, Philippe Candelier, S. Denorme, L. Pemiola, O. Cueto, T. Cabout, J. F. Nodin
Publikováno v:
2014 IEEE 6th International Memory Workshop (IMW).
In this paper the effect of SET temperature on data-retention performances in HfO 2 -based RRAM has been thoroughly investigated. We demonstrated, for the first time to our knowledge, that high temperature programming (even if it has no influence on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95f1651be0065b30638b340983235fe
https://doi.org/10.1109/imw.2014.6849355
https://doi.org/10.1109/imw.2014.6849355
Autor:
Alexis Farcy, Philippe Delpech, Francois Leverd, Lucile Broussous, Sebastien Cremer, Remi Beneyton, Nathalie Vulliet, Ali Ayazi, Lieven Verslegers, D. Pelissier-Tanon, N-K Hon, T. Quemerais, L. Salager, Cedric Durand, Subal Sahni, E. Gourvest, P. De Dobbelaere, Olivier Gourhant, J.F. Carpentier, K. Haxaire, Yannick Sanchez, M. Fourel, P. Brun, C. Richard, Attila Mekis, Frederic Boeuf, M. Guillermet, D. Benoit, L. Pinzelli, Peng Sun, Y. Le-Friec, B. Sautreuil, Y. Chi, F. Battegay, B. Orlando, F. Baron, Daniel Gloria, E. Batail, Thierry Pinguet, D. Monnier, H. Petiton, D. Ristoiu, Jean-Robert Manouvrier, Gianlorenzo Masini, Sébastien Jan
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Recently Silicon Photonics has generated an outstanding interest for integrated optical communications. In this paper we describe a 300mm Silicon Photonics platform designed for 25Gb/s and above applications at the three typical communication wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a960f0db21112f5d1e743e8e26cef219
https://doi.org/10.1109/iedm.2013.6724623
https://doi.org/10.1109/iedm.2013.6724623
Autor:
G. Reimbold, Onofrio Pirrotta, T. Cabout, T. Diokh, M. Guillermet, Luca Larcher, J. F. Nodin, Philippe Candelier, E. Jalaguier, E. Vianello, H. Grampeix, L. Perniola, Andrea Padovani, Vincent Jousseaume, G. Molas, Ch. Muller, Marc Bocquet, B. De Salvo, A. Toffoli
Publikováno v:
2013 5th IEEE International Memory Workshop.
This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. HfO2-RRAM devices (in a 1T1R con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f71b86e52fc01fad4e1979f380cc9ac
https://doi.org/10.1109/imw.2013.6582112
https://doi.org/10.1109/imw.2013.6582112