Zobrazeno 1 - 10
of 24
pro vyhledávání: '"M. Groenert"'
Autor:
G. Brill, U. Lee, R. N. Jacobs, L. A. Almeida, Yuanping Chen, M. Jaime-Vasquez, M. Groenert, J. D. Benson, Priyalal Wijewarnasuriya, P. J. Smith, L. O. Bubulac, J. K. Markunas, Andrew J. Stoltz
Publikováno v:
Journal of Electronic Materials. 38:1771-1775
Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a9252dd65779e6af421a2dc9fc2156
https://doi.org/10.1007/s11664-009-0758-7
https://doi.org/10.1007/s11664-009-0758-7
Autor:
R. N. Jacobs, M. Groenert, S. B. Qadri, T. Lee, C. Andrews, M. Kim, L. A. Almeida, M. Jaime-Vasquez, Joseph G. Pellegrino, Nadeemullah A. Mahadik, J. K. Markunas
Publikováno v:
Journal of Electronic Materials. 37:1480-1487
It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e705eff8e94b8adac35a2ab05bc5a854
https://doi.org/10.1007/s11664-008-0519-z
https://doi.org/10.1007/s11664-008-0519-z
Autor:
J. Markunas, S. B. Qadri, R. N. Jacobs, Nadeemullah A. Mahadik, Joseph G. Pellegrino, M. Jaime-Vasquez, M. Groenert, L. A. Almeida, C. Andrews
Publikováno v:
Journal of Crystal Growth. 310:2960-2965
We report on the significance of thermal expansion mismatch in the heteroepitaxial growth of CdTe on highly lattice-mismatched substrates. Such substrates including Si, Ge, or GaAs are desirable for CdTe buffer layer growth and subsequent deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::114be6cc248b2b05db521f3c96c60f88
https://doi.org/10.1016/j.jcrysgro.2008.02.029
https://doi.org/10.1016/j.jcrysgro.2008.02.029
Autor:
Yuanping Chen, Nibir K. Dhar, M. Carmody, D. D. Edwall, L. A. Almeida, Jose M. Arias, John H. Dinan, R. N. Jacobs, M. Groenert, Jon Ellsworth, G. Brill
Publikováno v:
Journal of Electronic Materials. 36:1098-1105
It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (μ e) and minority carrier lifetime (τ), are qualitatively comparable to those rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ace087f446a57d3d2f94b945d660d0
https://doi.org/10.1007/s11664-007-0182-9
https://doi.org/10.1007/s11664-007-0182-9
Autor:
J. K. Markunas, M. Groenert
Publikováno v:
Journal of Electronic Materials. 35:1287-1292
To investigate the potential benefits of compositional grading for dislocation control in CdTe/Si growth, Cd1−xZnxTe buffer layers with x graded smoothly from 1 to 0 have been deposited on Si (211) surfaces. Growth has been characterized using refl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e4203a52c40012c91889241c73c592
https://doi.org/10.1007/s11664-006-0256-0
https://doi.org/10.1007/s11664-006-0256-0
Publikováno v:
Journal of Electronic Materials. 35:1214-1218
An empirical study is reported, wherein HgCdTe was deposited simultaneously on multiple CdZnTe substrates of different orientations by molecular beam epitaxy. These orientations included the following vicinal surfaces: (115)B, (113)B, (112)B, and (55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e645d4e55e43f0ac35b7b1ddb76e675
https://doi.org/10.1007/s11664-006-0243-5
https://doi.org/10.1007/s11664-006-0243-5
Publikováno v:
Journal of Electronic Materials. 35:1455-1460
A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that the Te- and As-exposed Si (112) surface had 70% As and 27% Te coverage, respectively. Direct surface coverage measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811af372af5f53f615e18abfeba89cc2
https://doi.org/10.1007/s11664-006-0283-x
https://doi.org/10.1007/s11664-006-0283-x
Autor:
G. Brill, John H. Dinan, Jose M. Arias, L. A. Almeida, Yuanping Chen, J. G. Pasko, Robert B. Bailey, Nibir K. Dhar, M. Carmody, D. D. Edwall, M. Groenert
Publikováno v:
Journal of Electronic Materials. 35:1417-1422
We have fabricated a series of 256 pixel×256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a8629ffd6e26fbb5cb32724cf2d020d
https://doi.org/10.1007/s11664-006-0277-8
https://doi.org/10.1007/s11664-006-0277-8
Autor:
G. Brill, Yuanping Chen, M. Carmody, Nibir K. Dhar, Jose M. Arias, John H. Dinan, M. Groenert, J. G. Pasko, D. D. Edwall, Jagmohan Bajaj, Andrew J. Stoltz, Scott A. Cabelli, L. A. Almeida, Robert B. Bailey
Publikováno v:
Journal of Electronic Materials. 34:832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44208f9073859dfcf85cba35d872a68
https://doi.org/10.1007/s11664-005-0028-2
https://doi.org/10.1007/s11664-005-0028-2
Publikováno v:
Applied Physics Letters. 88:031910
The species and the nature of their chemical bonds at the surface of a hydrogen-terminated Si(211) wafer were characterized using temperature desorption spectroscopy, ion scattering spectroscopy, and electron spectroscopy. The surface region is domin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b56934ff760624d380d9c0103b0ab86
https://doi.org/10.1063/1.2166682
https://doi.org/10.1063/1.2166682