Zobrazeno 1 - 10
of 165
pro vyhledávání: '"M. Groenert"'
Autor:
G. Brill, U. Lee, R. N. Jacobs, L. A. Almeida, Yuanping Chen, M. Jaime-Vasquez, M. Groenert, J. D. Benson, Priyalal Wijewarnasuriya, P. J. Smith, L. O. Bubulac, J. K. Markunas, Andrew J. Stoltz
Publikováno v:
Journal of Electronic Materials. 38:1771-1775
Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determi
Autor:
R. N. Jacobs, M. Groenert, S. B. Qadri, T. Lee, C. Andrews, M. Kim, L. A. Almeida, M. Jaime-Vasquez, Joseph G. Pellegrino, Nadeemullah A. Mahadik, J. K. Markunas
Publikováno v:
Journal of Electronic Materials. 37:1480-1487
It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared
Autor:
J. Markunas, S. B. Qadri, R. N. Jacobs, Nadeemullah A. Mahadik, Joseph G. Pellegrino, M. Jaime-Vasquez, M. Groenert, L. A. Almeida, C. Andrews
Publikováno v:
Journal of Crystal Growth. 310:2960-2965
We report on the significance of thermal expansion mismatch in the heteroepitaxial growth of CdTe on highly lattice-mismatched substrates. Such substrates including Si, Ge, or GaAs are desirable for CdTe buffer layer growth and subsequent deposition
Autor:
Yuanping Chen, Nibir K. Dhar, M. Carmody, D. D. Edwall, L. A. Almeida, Jose M. Arias, John H. Dinan, R. N. Jacobs, M. Groenert, Jon Ellsworth, G. Brill
Publikováno v:
Journal of Electronic Materials. 36:1098-1105
It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (μ e) and minority carrier lifetime (τ), are qualitatively comparable to those rep
Autor:
J. K. Markunas, M. Groenert
Publikováno v:
Journal of Electronic Materials. 35:1287-1292
To investigate the potential benefits of compositional grading for dislocation control in CdTe/Si growth, Cd1−xZnxTe buffer layers with x graded smoothly from 1 to 0 have been deposited on Si (211) surfaces. Growth has been characterized using refl
Publikováno v:
Journal of Electronic Materials. 35:1214-1218
An empirical study is reported, wherein HgCdTe was deposited simultaneously on multiple CdZnTe substrates of different orientations by molecular beam epitaxy. These orientations included the following vicinal surfaces: (115)B, (113)B, (112)B, and (55
Publikováno v:
Journal of Electronic Materials. 35:1455-1460
A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that the Te- and As-exposed Si (112) surface had 70% As and 27% Te coverage, respectively. Direct surface coverage measure
Autor:
G. Brill, John H. Dinan, Jose M. Arias, L. A. Almeida, Yuanping Chen, J. G. Pasko, Robert B. Bailey, Nibir K. Dhar, M. Carmody, D. D. Edwall, M. Groenert
Publikováno v:
Journal of Electronic Materials. 35:1417-1422
We have fabricated a series of 256 pixel×256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientifi
Autor:
G. Brill, Yuanping Chen, M. Carmody, Nibir K. Dhar, Jose M. Arias, John H. Dinan, M. Groenert, J. G. Pasko, D. D. Edwall, Jagmohan Bajaj, Andrew J. Stoltz, Scott A. Cabelli, L. A. Almeida, Robert B. Bailey
Publikováno v:
Journal of Electronic Materials. 34:832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost o
Publikováno v:
Applied Physics Letters. 88:031910
The species and the nature of their chemical bonds at the surface of a hydrogen-terminated Si(211) wafer were characterized using temperature desorption spectroscopy, ion scattering spectroscopy, and electron spectroscopy. The surface region is domin