Large Spin Hall Angle in Sputtered BiSb Topological Insulator on Top of Various Ferromagnets With In-Plane Magnetization for SOT Reader Application

Autor: H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, R. Nagabhirava, M. Ho, H. Takano

Publikováno v: IEEE Transactions on Magnetics. 59:1-4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a14f988c1a424049251ee4c679c42dd
https://doi.org/10.1109/tmag.2022.3215481

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A 7nm CMOS technology platform for mobile and high performance compute application

Autor: Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee

Publikováno v: 2017 IEEE International Electron Devices Meeting (IEDM).

We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5545f519d7dcbb19a8a64d95e77053fd
https://doi.org/10.1109/iedm.2017.8268476

Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges

Autor: Anil Kumar, Timothy J. McArdle, Dina H. Triyoso, P. Javorka, Judson R. Holt, Rick Carter, Amy Child, L. Kang, J. Kluth, Ryan Sporer, M. Gribelyuk, Bob Mulfinger, Sherry Straub, Klaus Hempel, Kasun Punchihewa, P. Chen

Publikováno v: ICICDT

High-k metal gate (HKMG) has been implemented in production for nearly 10 years. As scaling of HKMG on bulk Si is reaching its limit, alternative device architecture such as FINFETs and FDSOI are being pursued. FDSOI is well suited for applications n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b7b75d16b4a272353ddaf7b528f3c8a
https://doi.org/10.1109/icicdt.2016.7542058

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