Zobrazeno 1 - 10
of 63
pro vyhledávání: '"M. Gostkowski"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
M. Gostkowski, T. Schulz, J.R. Zaman, A. Vazquez, Ken Matthews, Jean-Pierre Colinge, Weize Xiong, James M. Frei, Chad Johns, Nirmal Chaudhary, C. R. Cleavelin, G. Gebara
Publikováno v:
IEEE Electron Device Letters. 25:813-815
A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6402260f821bdf73e5ba2a503f4dafc3
https://doi.org/10.1109/led.2004.839223
https://doi.org/10.1109/led.2004.839223
Autor:
D. Lewis, Jean-Pierre Colinge, M. F. Pas, Tsu-Jae King, Shaofeng Yu, G. Gebara, J.R. Zaman, Weize Xiong, C.R. Cleavelin, Rick L. Wise, M. Gostkowski, Billy Nguyen, G. Smith
Publikováno v:
IEEE Electron Device Letters. 25:541-543
Hydrogen anneal is used during FinFET processing to round off the corners of the silicon fins prior to gate oxidation and to smooth the surface of the fin sidewalls. This procedure greatly improves gate leakage and, in addition, reduces the width of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e0566cbbbe6d0f343c935085fc6fc6
https://doi.org/10.1109/led.2004.832787
https://doi.org/10.1109/led.2004.832787
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
M. Gostkowski, W. Xiong, C. Russ, Andrew Marshall, Klaus Schruefer, G. Knoblinger, C.R. Cleavelin, Franz Kuttner, P. Haibach, P. Patruno, T. Schulz
Publikováno v:
2005 IEEE International SOI Conference Proceedings.
Multi-gate MOSFET (MuGFET) are the most promising candidates for beyond 45nm technology CMOS nodes. For future SoC solutions in these technologies the ability to realize also analog building blocks is of utmost importance. Up to now only a few public
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92ad953f701c5fd31244002bb3e7afb
https://doi.org/10.1109/soi.2005.1563526
https://doi.org/10.1109/soi.2005.1563526
Autor:
Jean-Pierre Colinge, T. Schulz, M. Gostkowski, A. Woo, Anurag Chaudhry, Weize Xiong, C.R. Cleavelin, G. Gebara, P. Patruno, Ken Matthews, R.J. Zaman, Klaus Schruefer
Publikováno v:
2005 IEEE International SOI Conference Proceedings.
Fin thickness non-uniformity is a potential shortcoming of vertical multiple-gate devices such as FinFETs and tri-gate FETs. In this paper a test structure with intentionally misaligned gates is used to investigate the sensitivity of electrical chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aebfb6c7d78abb2b14c412ee5f95191
https://doi.org/10.1109/soi.2005.1563571
https://doi.org/10.1109/soi.2005.1563571
Autor:
M. Gostkowski, Klaus Schruefer, Weize Xiong, P. Patruno, C. Maleville, Serguei Okhonin, Cedric Bassin, C.R. Cleavelin, P. Fazan, T. Schulz, Mikhail Nagoga
Publikováno v:
2005 IEEE International SOI Conference Proceedings.
In this paper we experimentally study for the first time the retention characteristics of Z-RAM cells based on CMOS FinFET and tri-gate devices. A retention time of few milliseconds is measured at room temperature on 100 nm devices. This FinFET based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e316f71c26a4dec9bf97f2fbb2c53888
https://doi.org/10.1109/soi.2005.1563588
https://doi.org/10.1109/soi.2005.1563588
Autor:
Weize Xiong, M. Gostkowski, T. Schulz, Charvaka Duvvury, P. Patruno, Klaus Schruefer, Harald Gossner, C. Russ, Jörg Berthold, Christian Pacha, Andrew Marshall, Thomas Nirschl, K. von Arnim, R. Cleavelin, G. Knoblinger
Publikováno v:
ISSCC
Scopus-Elsevier
Scopus-Elsevier
Multi-gate FETs are promising for sub-45nm CMOS technologies. To address the link between design and technology, basic digital and analog circuits are fabricated using FinFET and triple-gate FETs. Digital circuit performance, leakage currents, and po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4ba115058232d5ecf3aa208a650403b
https://doi.org/10.1109/isscc.2006.1696221
https://doi.org/10.1109/isscc.2006.1696221
Autor:
R.J. Zaman, C.R. Cleavelin, Ken Matthews, M. Gostkowski, Jean-Pierre Colinge, Shaofeng Yu, Tsu-Jae King, P. Patruno, C. Maleville, M. F. Pas, Weize Xiong, Rick L. Wise
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1220c137abd9bb35da97c5db79880456
https://doi.org/10.1109/soi.2004.1391613
https://doi.org/10.1109/soi.2004.1391613