Zobrazeno 1 - 10
of 35
pro vyhledávání: '"M. Gjukic"'
Autor:
J. Weber, D. Kehrer, B. Kho, Wolfgang Spirkl, Manfred Plan, H. Hoenigschmid, D. Boursin, Peter Gregorius, Michael Richter, H. Steffens, I. Russell, M. Gjukic, Fabien Funfrock, K. Swaminathan, Jorg Weller, P.V. Petkov, Ronny Schneider, Martin Brox, S. Kieser, B. Weber, Maksim Kuzmenka, Thomas Hein, U. Moeller, I. Bormann, Rex Kho, K. Schiller
Publikováno v:
ISSCC
Modern graphics subsystems (gaming PCs, midhigh end graphics cards, game consoles) have reached the 2.6-2.8 Gb/s/pin regime with GDDR3/GDDR4, and experimental work has shown per pin rates up to 6 Gb/s/pin on individual test setups. In order to satisf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ff74ea6989947bcea1533be10fb6f7
https://doi.org/10.1109/jssc.2009.2034417
https://doi.org/10.1109/jssc.2009.2034417
Publikováno v:
physica status solidi (c). 1:1131-1143
Recent results concerning the aluminium-induced crystallization of thin SiGe alloy films are reviewed. This crystallization process can be employed throughout the entire alloy range and results in polycrystalline material without a significant amount
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7321eb627f51580e1f9cf5f2a3f1b806
https://doi.org/10.1002/pssc.200404330
https://doi.org/10.1002/pssc.200404330
Autor:
Martin S. Brandt, Martin Stutzmann, Oliver Ambacher, M. Gjukic, M. Hermann, L. Görgens, J. B. Philipp, T. Graf
Publikováno v:
Journal of Applied Physics. 93:9697-9702
The oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy were investigated by electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization, and photothermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126d8c7c000cd861eebcb95b210becd5
https://doi.org/10.1063/1.1577811
https://doi.org/10.1063/1.1577811
Publikováno v:
Journal of Superconductivity. 16:83-86
MBE-grown GaN : Mn layers with Mn doping concentrations around 1020 cm−3 were investigated by photoconductivity measurements. From electron spin resonance (ESR), Mn is known to be mostly present in the neutral Mn3+ or Mn2+ + h+ state, which leads t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56f714ac0bea09e76d0959bafb7e8d9
https://doi.org/10.1023/a:1023288718903
https://doi.org/10.1023/a:1023288718903
Publikováno v:
Applied Physics Letters. 85:2134-2136
Aluminum-induced layer exchange (ALILE) was used to crystallize amorphous silicon–germanium (a-Si1−xGex) alloys. A bilayer structure of aluminum (Al) and a-Si1−xGex was deposited on quartz substrates and annealed below the eutectic temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf10d1799fd7e25d8706571e168b7deb
https://doi.org/10.1063/1.1789245
https://doi.org/10.1063/1.1789245
Autor:
Axel Hoffmann, Ewa M. Goldys, T. Graf, Martin Strassburg, Enno Malguth, O. Gelhausen, Martin Stutzmann, M. Gjukic, Matthew R. Phillips
Publikováno v:
Applied Physics Letters. 84:4514-4516
The optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (5–23×1019 cm−3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c53eb3d8441575d0137daadb9f6e573
https://doi.org/10.1063/1.1757641
https://doi.org/10.1063/1.1757641
Publikováno v:
Applied Physics Letters. 81:5159-5161
Molecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 1020 cm−3 were investigated by optical absorption and photoconductivity measurements. From electron spin resonance Mn is known to be mostly present in the neutral a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5b2fd4572fec5998729c0cada77cc1
https://doi.org/10.1063/1.1530374
https://doi.org/10.1063/1.1530374
Autor:
Martin Stutzmann, M. Gjukic, U. Gerstmann, Martin S. Brandt, C. Bihler, T. Graf, Wolf Gero Schmidt, Marco Hoeb
Publikováno v:
Physical Review B. 80
The effects of hydrogenation on Mn-doped GaN are studied with electron-paramagnetic resonance (EPR), local vibrational mode (LVM) spectroscopy, and density-functional theory (DFT) calculations. With EPR, we find two distinct Mn complexes which, in pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc24cdf20e436932802767a9fa057db
https://doi.org/10.1103/physrevb.80.205205
https://doi.org/10.1103/physrevb.80.205205
Autor:
R. Kho, D. Boursin, M. Brox, P. Gregorius, H. Hoenigschmid, B. Kho, S. Kieser, D. Kehrer, M. Kuzmenka, U. Moeller, P. Petkov, M. Plan, M. Richter, I. Russell, K. Schiller, R. Schneider, K. Swaminathan, B. Weber, J. Weber, I. Bormann, F. Funfrock, M. Gjukic, W. Spirkl, H. Steffens, J. Weller, T. Hein
Publikováno v:
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d92fa074e617000808f2ee3a3d9f5b
https://doi.org/10.1109/isscc.2009.4977344
https://doi.org/10.1109/isscc.2009.4977344
Publikováno v:
Physical Review B. 67
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ebb255954f2ceb47ab23cc86d3c7e55
https://doi.org/10.1103/physrevb.67.209903
https://doi.org/10.1103/physrevb.67.209903