Zobrazeno 1 - 10
of 240
pro vyhledávání: '"M. Ghanashyam Krishna"'
Autor:
Ravipati Praveena, Gottapu. Varaprasada Rao, Karna Balasubrahmanyam, M. Ghanashyam Krishna, Vinjanampati Madhurima
Publikováno v:
AIMS Materials Science, Vol 3, Iss 1, Pp 231-244 (2016)
The optical and water repellant properties of single layer and bilayer films of Ag and SnO2 deposited on glass substrates by thermal evaporation have been reported. Ag/SnO2 bilayers were deposited in two sequences wherein the deposition of SnO2 layer
Externí odkaz:
https://doaj.org/article/c3f1e81e292b47b88a07e5d89933cd75
Autor:
Arun Nimmala, Anand P. Pathak, M. Ghanashyam Krishna, Mallikarjuna Motapothula, Venkata Sai Nageswara Rao Sunkaranam
Publikováno v:
ACS Applied Electronic Materials. 4:5594-5601
Akademický článek
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Publikováno v:
Journal of Electroanalytical Chemistry. 941:117527
Publikováno v:
ACS Applied Nano Materials. 4:1252-1259
The synthesis of silver bismuth iodide (SBI) nanocomposite thin films for visible light photodetection application is reported. The formation of different compositions of SBI (AgBiI4 or Ag2BiI5) is...
Publikováno v:
Journal of Electronic Materials. 50:1412-1424
The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is reported. The films were deposited using a single composite target of Si and graphite by magnetron sputtering. The formation of the 21H polytype of SiC was confi
Autor:
A. Mangababu, K. Vinod Kumar, N. Arun, L. D. Varma Sangani, S. V. S. Nageswara Rao, M. Ghanashyam Krishna, A. P. Pathak
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:2973-2986
In this work, the effects of 120 MeV Ag ion irradiation on the switching properties of Au/HfO2/Au-based Resistive Random Access Memory (RRAM) devices are reported. The ion fluence is varied between 5 × 1010 and 5 × 1012 ions/cm2 while two device si
Autor:
L. D. Varma Sangani, Sreedevi Vallabhapurapu, Ashok Srinivasan, V. V. Srinivasu, M. Ghanashyam Krishna, J. Das
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:3556-3565
The preparation of chitosan-aluminum-doped zinc oxide (AZO) composite thin films for transparent resistive random access memory applications is reported. The variation in optical transmission, refractive index and optical bandgap of the composite fil
Autor:
G. Rajaram, M. Ghanashyam Krishna, Nilanjan Basu, Poreddy Chaitanya Akshara, Jayeeta Lahiri, Yalambaku Rajesh
Publikováno v:
Electronic Materials Letters. 16:231-238
Thin film Au–SiC–Cu and Au–SiC–Pt crossbar structures of 40μmx40μm size where all three layers are 100 nm thickness were fabricated by lithography. Decomposition of the SiC film is observed under the influence of an electric field (104–10
Publikováno v:
RSC Advances. 10:25721-25729
The growth and optical behavior of ZnO thin film-nanowire array homo-structures is reported. The ZnO films are deposited on glass substrates by thermal evaporation and subjected to heat treatment at 400 °C for 2 h to achieve crystallinity and stoich