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pro vyhledávání: '"M. Gellon"'
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
The shallow dopants B, P, Al, As, and Sb in Si have been investigated by low-temperature Fourier-transform infrared absorption measurements. Experimental procedures are described to obtain quantitative results for the B and P concentration with impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52c23adde54296726e4dc9a330e8194
https://doi.org/10.1063/1.56896
https://doi.org/10.1063/1.56896
