Zobrazeno 1 - 10 of 173 pro vyhledávání: '"M. Geddo"'
1
Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-xNx layers
Autor: Giorgio Pettinari, Maddalena Patrini, Mario Capizzi, Antonio Polimeni, Giorgio Guizzetti, Marco Felici, M. S. Sharma, Silvia Rubini, E. Giulotto, M. Geddo
Publikováno v: Journal of applied physics 125 (2019). doi:10.1063/1.5093809
info:cnr-pdr/source/autori:Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Sharma, M. S.; Capizzi, M.; Polimeni, A.; Pettinari, G.; Rubini, S.; Felici, M./titolo:Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-x<%2Finf>Nx<%2Finf> layers/doi:10.1063%2F1.5093809/rivista:Journal of applied physics/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:125
The GaAs-like longitudinal-optical (LO) phonon frequency in hydrogenated GaAsN (x = 0.01) layers - with different H doses and similar low-energy irradiation conditions - was investigated by micro-Raman measurements in different scattering geometries
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aef9013df5f203904df96dcf70ab708
http://www.cnr.it/prodotto/i/408528
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2
Micro-Raman Mapping of the Strain Field in GaAsN/GaAsN:H Planar Heterostructures: A Brief Review and Recent Evolution
Autor: M. Geddo, E. Giulotto
Publikováno v: Applied Sciences. 9:4864
Raman scattering is an effective tool for the investigation of the strain state of crystalline solids. In this brief review, we show how the analysis of the GaAs-like longitudinal optical phonon frequency allowed to map the strain behavior across int
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0dc5ce2699c0a9a72a6bdff904626bea
https://doi.org/10.3390/app9224864
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3
Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures
Autor: A. Miriametro, Mario Capizzi, M. Fischer, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Geddo, M. Reinhardt, Antonio Polimeni, F. Ranalli, V. Gaspari, Alfred Forchel
Publikováno v: Physica B: Condensed Matter. :850-853
Photoluminescence and photoreflectance spectroscopy are used to investigate the electronic properties of InxGa1−xAs1−yNy/GaAs heterostructures treated with low-energy atomic hydrogen. With increasing hydrogen doses, the InxGa1−xAs1−yNy optica
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f480c4a17d9bf5f724dc9717554aa73
https://doi.org/10.1016/s0921-4526(01)00911-5
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6
Photoreflectance study of growth mode in InAs–GaAs quasimonolayer single quantum wells
Autor: Amalia Patanè, M. Geddo, Mario Capizzi, Faustino Martelli
Publikováno v: Journal of Applied Physics. 84:3374-3377
Photoreflectance measurements have been performed in a number of InAs/GaAs single-quantum wells with nominal thickness L ranging from 0.6 to 2.0 ML. The InAs growth mode was investigated by analyzing the evolution, with increasing coverage, of the op
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a950be14d6ca014082be2502b3970e8
https://doi.org/10.1063/1.368494
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7
Thermoreflectance study of the direct energy gap of GaSb
Autor: Vittorio Bellani, S. Di Lernia, R. Magnanini, M. Geddo, Giorgio Guizzetti, S. Franchi, A. Bosacchi
Publikováno v: Scopus-Elsevier
We studied the optical properties of high quality GaSb layers, grown by molecular beam epitaxy, in the region of the fundamental gap E0 using thermoreflectance spectroscopy in the temperature range between 80 and 300 K. The experimental line-shapes w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97cd009c57e45033de01890b7fd20985
https://doi.org/10.1016/s0038-1098(97)00277-9
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8
Step pseudomorphic asymmetric wells: an optical study in the framework of III - V strain-induced sub-two-dimensional quantum systems
Autor: S. Di Lernia, Lucio Claudio Andreani, M. Geddo
Publikováno v: Semiconductor Science and Technology. 12:1121-1128
An optical study of the basic epitaxial structure for the fabrication of strain-induced sub-two-dimensional quantum systems was performed by comparing photoreflectance measurements with calculations of the energy positions and the relative intensitie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6830a1535010ac41baa01e29c0f0e287
https://doi.org/10.1088/0268-1242/12/9/010
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9
Photoreflectance versus photoluminescence in strain induced quantum well wires
Autor: A. Bosacchi, A. Stella, S. Di Lernia, M. Geddo, S. Franchi, D. Peschiaroli, M. Gentili
Publikováno v: Solid State Communications. 100:221-225
Photoreflectance vs photoluminescence measurements of stress-induced quantum wires, obtained by patterning an InGaAs layer pseudomorphic grown on a GaAs well in wire-shaped stressors, are presented and compared. An excellent agreement was found betwe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e25123370d1aa3f7daeaeed87ba2c66
https://doi.org/10.1016/0038-1098(96)00402-4
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10
Above the band gap structures in Ge nanoparticles: optical-absorption spectra
Autor: P. Tognini, A. Stella, M. Geddo, P. Cheyssac, Richard Kofman, Lucio Claudio Andreani
Publikováno v: Il Nuovo Cimento D. 18:865-872
We report absorption measurements on Ge nanoparticles in the range 0.6–6 eV. By reducing the dot average radius to about 13 A, one observes a relevant blue-shift of theE1+Δ1 andE2 peaks and a change of the oscillator strength of the two main struc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79124c5c7e67c9b9bf22723a72875130
https://doi.org/10.1007/bf02457319
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