Zobrazeno 1 - 10 of 548 pro vyhledávání: '"M. Geddo"'
1
Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-xNx layers
Autor: Giorgio Pettinari, Maddalena Patrini, Mario Capizzi, Antonio Polimeni, Giorgio Guizzetti, Marco Felici, M. S. Sharma, Silvia Rubini, E. Giulotto, M. Geddo
Publikováno v: Journal of applied physics 125 (2019). doi:10.1063/1.5093809
info:cnr-pdr/source/autori:Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Sharma, M. S.; Capizzi, M.; Polimeni, A.; Pettinari, G.; Rubini, S.; Felici, M./titolo:Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-x<%2Finf>Nx<%2Finf> layers/doi:10.1063%2F1.5093809/rivista:Journal of applied physics/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:125
The GaAs-like longitudinal-optical (LO) phonon frequency in hydrogenated GaAsN (x = 0.01) layers - with different H doses and similar low-energy irradiation conditions - was investigated by micro-Raman measurements in different scattering geometries
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aef9013df5f203904df96dcf70ab708
http://www.cnr.it/prodotto/i/408528
Zobrazit plný text záznamu
2
Micro-Raman Mapping of the Strain Field in GaAsN/GaAsN:H Planar Heterostructures: A Brief Review and Recent Evolution
Autor: M. Geddo, E. Giulotto
Publikováno v: Applied Sciences. 9:4864
Raman scattering is an effective tool for the investigation of the strain state of crystalline solids. In this brief review, we show how the analysis of the GaAs-like longitudinal optical phonon frequency allowed to map the strain behavior across int
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0dc5ce2699c0a9a72a6bdff904626bea
https://doi.org/10.3390/app9224864
Zobrazit plný text záznamu
3
Raman scattering in InAs/AlGaAs quantum dot nanostructures
Autor: Giovanna Trevisi, M. Geddo, E. Giulotto, Paola Frigeri, Giorgio Guizzetti, M. S. Grandi, Luca Seravalli, S. Franchi
Publikováno v: Applied physics letters 98 (2011): 111903-1. doi:10.1063/1.3567024
info:cnr-pdr/source/autori:E. Giulotto 1, M. Geddo 1, M. S. Grandi 1, G. Guizzetti 1, G. Trevisi 2, L. Seravalli 2, P. Frigeri 2 and S. Franchi 2/titolo:Raman scattering in InAs%2FAlGaAs quantum dot nanostructures/doi:10.1063%2F1.3567024/rivista:Applied physics letters/anno:2011/pagina_da:111903-1/pagina_a:/intervallo_pagine:111903-1/volume:98
We report on Raman scattering experiments on InAs/Al(x)Ga(1-x)As quantum dot heterostructures with 0 0, we detected several lines originating from the Al(x)Ga(1-x)As alloy. These can be related to scattering from GaAs-like and AlAs-like phonons with
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52a53d5fc31b74ab307f72726b75be51
http://www.cnr.it/prodotto/i/204631
Zobrazit plný text záznamu
4
Interplay of nitrogen and hydrogen in InxGa1−xAs1−yNy/GaAs heterostructures
Autor: A. Miriametro, Mario Capizzi, M. Fischer, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Frova, M. Geddo, M. Reinhardt, Antonio Polimeni, F. Ranalli, V. Gaspari, Alfred Forchel
Publikováno v: Physica B: Condensed Matter. :850-853
Photoluminescence and photoreflectance spectroscopy are used to investigate the electronic properties of InxGa1−xAs1−yNy/GaAs heterostructures treated with low-energy atomic hydrogen. With increasing hydrogen doses, the InxGa1−xAs1−yNy optica
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f480c4a17d9bf5f724dc9717554aa73
https://doi.org/10.1016/s0921-4526(01)00911-5
Zobrazit plný text záznamu
7
Photoreflectance study of growth mode in InAs–GaAs quasimonolayer single quantum wells
Autor: Amalia Patanè, M. Geddo, Mario Capizzi, Faustino Martelli
Publikováno v: Journal of Applied Physics. 84:3374-3377
Photoreflectance measurements have been performed in a number of InAs/GaAs single-quantum wells with nominal thickness L ranging from 0.6 to 2.0 ML. The InAs growth mode was investigated by analyzing the evolution, with increasing coverage, of the op
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a950be14d6ca014082be2502b3970e8
https://doi.org/10.1063/1.368494
Zobrazit plný text záznamu
8
Thermoreflectance study of the direct energy gap of GaSb
Autor: Vittorio Bellani, S. Di Lernia, R. Magnanini, M. Geddo, Giorgio Guizzetti, S. Franchi, A. Bosacchi
Publikováno v: Scopus-Elsevier
We studied the optical properties of high quality GaSb layers, grown by molecular beam epitaxy, in the region of the fundamental gap E0 using thermoreflectance spectroscopy in the temperature range between 80 and 300 K. The experimental line-shapes w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97cd009c57e45033de01890b7fd20985
https://doi.org/10.1016/s0038-1098(97)00277-9
Zobrazit plný text záznamu
9
Step pseudomorphic asymmetric wells: an optical study in the framework of III - V strain-induced sub-two-dimensional quantum systems
Autor: S. Di Lernia, Lucio Claudio Andreani, M. Geddo
Publikováno v: Semiconductor Science and Technology. 12:1121-1128
An optical study of the basic epitaxial structure for the fabrication of strain-induced sub-two-dimensional quantum systems was performed by comparing photoreflectance measurements with calculations of the energy positions and the relative intensitie
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6830a1535010ac41baa01e29c0f0e287
https://doi.org/10.1088/0268-1242/12/9/010
Zobrazit plný text záznamu
10
Study of the Interface Properties in InGaP/GaAs multi quantum wells by Low-Pressure MOVPE from liquid sources
Autor: M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3
Publikováno v: info:cnr-pdr/source/autori:M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3/congresso_nome:10th Europeam Workshop on Metalorganic Vapour Phase Epitaxy/congresso_luogo:Lecce/congresso_data:8-11 Giugno 2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
The Al-free InGaP/GaAs heterostructure is an interesting alternative to AlGaAs/GaAs system in a wide range of micro- and optoelectronic applications [1-3]. Nevertheless, the required ML-abruptness of both normal and inverse InGaP-GaAs interfaces is n
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::b3aab2ae0557700997ef25658858cf38
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje