Zobrazeno 1 - 10
of 286
pro vyhledávání: '"M. Gammon"'
Autor:
Joshua M. Gammon, Sean T. Carey, Vikas Saxena, Haleigh B. Eppler, Shannon J. Tsai, Christina Paluskievicz, Yanbao Xiong, Lushen Li, Marian Ackun-Farmmer, Lisa H. Tostanoski, Emily A. Gosselin, Alexis A. Yanes, Xiangbin Zeng, Robert S. Oakes, Jonathan S. Bromberg, Christopher M. Jewell
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-18 (2023)
Antigen-specific tolerance represents a promising strategy to treat type 1 diabetes and islet allograft rejection. Here, the authors deliver immune signals to lymph nodes to promote antigen-specific regulatory T cells and prevent disease in models of
Externí odkaz:
https://doaj.org/article/2fe54bb72010401d8d7a7af2a350784f
Autor:
Arne Benjamin Renz, Qin Ze Cao, Oliver James Vavasour, James Gott, Peter M. Gammon, Tian Xiang Dai, G.W.C. Baker, Phillip A. Mawby, Vishal Shah
Publikováno v:
Materials Science Forum. 1090:147-151
A study on the impact of different growth and deposition techniques on the reliability of silicon dioxide (SiO2) layers on silicon carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) is presented and compared to channel mobilities that were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4372db40d42183890ba832cb12158815
https://doi.org/10.4028/p-w3c3b0
https://doi.org/10.4028/p-w3c3b0
Autor:
Ioannis Almpanis, Paul Evans, Marina Antoniou, Peter M. Gammon, Lee Empringham, Florin Udrea, Phillip A. Mawby, Neophytos Lophithis
Publikováno v:
Key Engineering Materials. 946:125-133
10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe3a682bd4a3a0e3c48591b380f789e
https://doi.org/10.4028/p-21h5lt
https://doi.org/10.4028/p-21h5lt
Autor:
James I. Andorko, Shannon J. Tsai, Joshua M. Gammon, Sean T. Carey, Xiangbin Zeng, Emily A. Gosselin, Camilla Edwards, Shrey A. Shah, Krystina L. Hess, Christopher M. Jewell
Publikováno v:
Biomaterials science. 10(16)
Local signal integration in lymph nodes (LNs) controls the potency and selectivity of immune responses. Here, intra-LN depots were used to direct communication within treated LNs, causing programmable and divergent systemic immunotherapy outcomes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::137b6c797aa96f3a2a2ff9ff9e5a6def
https://pubmed.ncbi.nlm.nih.gov/35796247
https://pubmed.ncbi.nlm.nih.gov/35796247
Autor:
Rosine Coq Germanicus, Abdelhaq Boumaarouf, Christina Villeneuve-Faure, Vish Al Shah, Peter M. Gammon, Ulrike Lüders
Publikováno v:
Materials Science Forum
Materials Science Forum, 2023, 1089, pp.63-69. ⟨10.4028/p-666z18⟩
Materials Science Forum, 2023, 1089, pp.63-69. ⟨10.4028/p-666z18⟩
International audience; The possibility of anodic oxidation of SiC surfaces by a strong, local electric field applied during Atomic Force Microscopy (AFM) under ambient conditions is an interesting method to achieve nanopatterning of SiC, but is also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::474e37f5bad5e615db287ded57381388
https://hal.science/hal-04124446
https://hal.science/hal-04124446
Autor:
A. Benjamin Renz, Oliver J. Vavasour, Peter M. Gammon, Fan Li, Tian Xiang Dai, G.W.C. Baker, Nicholas Grant, John Murphy, Phillip A. Mawby, Vish Al Shah
Publikováno v:
Materials Science Forum. 1062:325-329
A systematic capacitance-voltage (C-V) and time-dependent dielectric breakdown (TDDB) study on silicon carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) that use silicon dioxide (SiO2) is shown in this paper. Oxides were formed using atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8cf5fe157aca21c708cfc09aafa650c
https://doi.org/10.4028/p-b76y6c
https://doi.org/10.4028/p-b76y6c
Autor:
A. Benjamin Renz, Oliver J. Vavasour, Amador Pérez-Tomás, Qin Ze Cao, Vish Al Shah, Yeganeh Bonyadi, Vasantha Pathirana, Tanya Trajkovic, G.W.C. Baker, Phillip A. Mawby, Peter M. Gammon
Publikováno v:
Materials Science Forum. 1062:190-194
A systematic study is presented into the impact of a P2O5 surface passivation treatment, carried out prior to the deposition of a high refactory metal contact to 3.3 kV JBS diodes. Electrical results from Mo, W and Nb diodes reveal that those diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ede7427a9e284980b00dbd0adc078f
https://doi.org/10.4028/p-97jy4p
https://doi.org/10.4028/p-97jy4p
Autor:
Lisa H. Tostanoski, Yu-Chieh Chiu, Joshua M. Gammon, Thomas Simon, James I. Andorko, Jonathan S. Bromberg, Christopher M. Jewell
Publikováno v:
Cell Reports, Vol 16, Iss 11, Pp 2940-2952 (2016)
Many experimental therapies for autoimmune diseases, such as multiple sclerosis (MS), aim to bias T cells toward tolerogenic phenotypes without broad suppression. However, the link between local signal integration in lymph nodes (LNs) and the specifi
Externí odkaz:
https://doaj.org/article/a7452be5a5f8404eb1b27369c79b3792
Publikováno v:
Drug Deliv Transl Res
Autoimmune diseases—where the immune system mistakenly targets self-tissue—remain hindered by non-specific therapies. For example, even molecularly-specific monoclonal antibodies fail to distinguish between healthy cells and self-reactive cells.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab6d58f090c27646b1479d649a3b25c2
https://doi.org/10.1007/s13346-021-01075-5
https://doi.org/10.1007/s13346-021-01075-5
Autor:
Rosine Coq Germanicus, Wadia Jouha, Niemat Moultif, Peter De Wolf, Vishal A. Shah, Peter. M Gammon, Ulrike Luders, Olivier Latry
Publikováno v:
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 2022, pp.1-6. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Sep 2022, Coventry, France. pp.1-6, ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 2022, pp.1-6. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Sep 2022, Coventry, France. pp.1-6, ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
Precise and accurate electrical characterization of power electronics device die structures at the wafer level is essential to compare device operation to the design and to model reliability issues. In this paper, a parametric analysis for local elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87937847d1cab9a8b2fbd9151db53342
https://doi.org/10.1109/wipdaeurope55971.2022.9936397
https://doi.org/10.1109/wipdaeurope55971.2022.9936397