Výsledky vyhledávání - "M. G. Rastegaeva"

On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions

Autor: I. S. Shashkin, K. V. Bakhvalov, D. A. Veselov, M. G. Rastegaeva, V. V. Shamakhov, A. V. Lyutetskiy, E. A. Bechvay, I. S. Tarasov, Nikita A. Pikhtin, Sergey O. Slipchenko, V. A. Strelets

Publikováno v: Semiconductors. 50:1225-1230

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4def7818c13f6442e85e663a8ffae80f
https://doi.org/10.1134/s1063782616090244

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Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

Autor: A. V. Lyutetskiy, M. G. Rastegaeva, Ya V Lubyanskiy, A Yu Leshko, Nikita A. Pikhtin, Sergey O. Slipchenko, I. S. Tarasov, V. V. Zolotarev, K.V. Bakhvalov

Publikováno v: Quantum Electronics. 44:907-911

We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba7ffb20979364637a42958542627ad3
https://doi.org/10.1070/qe2014v044n10abeh015475

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Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

Autor: Nikita A. Pikhtin, M. G. Rastegaeva, V. V. Zolotarev, A. V. Lutetskyi, A. A. Podoskin, I. S. Shashkin, A. Y. Leshko, P. S. Kop’ev, Sergey O. Slipchenko, I. S. Tarasov

Publikováno v: Semiconductors. 48:691-696

Small-signal-controlled optical modulator structure capable of operation at several wavelengths is suggested. It is shown that the application of spectrally selective mirrors makes it possible to develop optically integrated cavities that provide las

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c73bb436b2c20c986b0e20084f23a00
https://doi.org/10.1134/s1063782614050200

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Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm

Autor: Sergey O. Slipchenko, K. V. Bakhvalov, M. G. Rastegaeva, V. V. Shamakhov, I. S. Tarasov, A. V. Lyutetskiy, Nikita A. Pikhtin, D. N. Nikolaev

Publikováno v: Semiconductors. 48:373-376

Two types of laser heterostructures, i.e., those without internal mechanical stress compensation, with AlGaAs-alloy emitter and waveguide layers (type 1), and laser heterostructures with stress compensation, with AlGaAsP emitter and waveguide layers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25dfd302ea0de8b19a043bac8082bd9e
https://doi.org/10.1134/s1063782614030233

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850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Autor: V. V. Shamakhov, V. V. Vasylyeva, M. G. Rastegaeva, D. N. Nikolaev, I. S. Tarasov, L. S. Vavilova, A. V. Lyutetskiy, D. A. Vinokurov, K. V. Bakhvalov

Publikováno v: Semiconductors. 47:1075-1078

MOS hydride epitaxy is used to grow AlGaAs/GaAs heterostructures both without compensation and with compensation for internal mechanical stresses by the introduction of phosphorus into different layers of the heterostructure; this compensation affect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b62085998bb8761fbe45d770df69b96
https://doi.org/10.1134/s1063782613080204

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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

Autor: I. S. Shashkin, I. S. Tarasov, M. G. Rastegaeva, A. D. Bondarev, V. V. Shamakhov, A. V. Lyutetskiy, D. N. Nikolaev, D. A. Vinokurov, D. A. Veselov, Sergey O. Slipchenko, Nikita A. Pikhtin, Z. N. Sokolova, A. L. Stankevich

Publikováno v: Semiconductors. 46:1207-1210

The temperature dependences of the emission characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures (wavelengths λ = 1010–1070 nm) have been studied. It was found that, in the continuous-wave m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::593544f4e324d100949f0e215b62aa44
https://doi.org/10.1134/s1063782612090205

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High-order diffraction gratings for high-power semiconductor lasers

Autor: M. G. Rastegaeva, V. V. Vasil’eva, I. S. Shashkin, A. Yu. Leshko, I. S. Tarasov, D. A. Vinokurov, Nikita A. Pikhtin, V. V. Zolotarev, A. N. Petrunov, Z. N. Sokolova

Publikováno v: Semiconductors. 46:241-246

A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf958faead6a173f0cb38b599e9cfe8a
https://doi.org/10.1134/s1063782612020236

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A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

Autor: A. A. Usikova, N. Kh. Timoshina, V. P. Khvostikov, S. V. Sorokina, M. G. Rastegaeva, Yu. M. Zadiranov, F. Y. Soldatenkov

Publikováno v: Semiconductors. 45:1219-1226

The transmission-line model with radial and rectangular geometry of contact pads has been used to study the contact systems Cr-Au, Cr-Au-Ag-Au, Ti-Pt-Au, Pt-Ti-Pt-Au, Pt-Au, Ti-Au, Ti-Pt-Ag, Ti-Pt-Ag-Au, and Pt-Ag deposited on the p-GaSb surface by t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18b8692f8172247d276561382672f299
https://doi.org/10.1134/s1063782611090193

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Sensor composites consisting of a ceramic substrate and thin films of TbO x oxides and (TbO x )0.5(YO1.5)0.5 solid solutions

Autor: M. V. Kalinina, M. G. Rastegaeva, P. V. Rastegaev, P. A. Tikhonov, M. F. Panov, L. V. Morozova

Publikováno v: Glass Physics and Chemistry. 35:525-530

A porous nanoceramic material based on aluminum magnesium spinel is synthesized. Films based on terbium oxide and the (TbOx)0.5(YO1.5)0.5 solid solution are prepared by the sol-gel processing and thermal vacuum evaporation onto a MgAl2O4 substrate. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df5b60ed460d7a39e4154c5d6e4ff724
https://doi.org/10.1134/s1087659609050113

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Studying local surface electric conductivity of a ZnSe/CdSe/ZnSe heterostructure by scanning tunneling microscopy in the field electron emission regime

Autor: V. P. Evtikhiev, Sergei Ivanov, M. G. Rastegaeva, S. A. Masalov

Publikováno v: Technical Physics Letters. 35:504-507

The surface morphology and local electric conductivity of a ZnSe/CdSe/ZnSe nanoheterostructure have been studied by scanning tunneling microscopy (STM) in the field electron emission regime. The homogeneity of the local conductivity distribution in a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f5d0f655bf379d46fc47acd03ab9be4b
https://doi.org/10.1134/s1063785009060078

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