Zobrazeno 1 - 10
of 15
pro vyhledávání: '"M. Fullmann"'
Publikováno v:
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d394bdbc252b79fceb75f720b8da0e
https://doi.org/10.1109/ispsd.1990.991074
https://doi.org/10.1109/ispsd.1990.991074
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
Lateral 600-V DMOSFETs on SOI (silicon-on-insulator) substrates have been used as test devices to compare conventional oxide passivation with a passivation system consisting of oxide and an additional semiresistive layer (SIPOS or Si/sub x/N/sub y/).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc64c7939cce3dbe74d574e1da83701
https://doi.org/10.1109/ispsd.1993.297123
https://doi.org/10.1109/ispsd.1993.297123
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
Lateral IGBTs (insulated-gate bipolar transistors) and ESTs (emitter-switched thyristors) on SOI (silicon-on-insulator) substrates are compared experimentally and by computer simulation. Experimental and calculated forward characteristics are present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899b6f70c3ced77cec5805e26295d57d
https://doi.org/10.1109/ispsd.1993.297134
https://doi.org/10.1109/ispsd.1993.297134
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
Simulated temperature distributions for SOI-structures with various film thicknesses for different operating conditions (on state, turn-off and pulse overload) and different SOI sheet thicknesses (20 /spl mu/m, 5 /spl mu/m) are presented and discusse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb41e9f38acd919b162080d16631ebf
https://doi.org/10.1109/ispsd.1994.583671
https://doi.org/10.1109/ispsd.1994.583671
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda66df90e72c682b3e993676c9551d8
https://doi.org/10.1109/ispsd.1994.583676
https://doi.org/10.1109/ispsd.1994.583676
Publikováno v:
IEEE Transactions on Electron Devices. 23:899-904
Light activated power thyristors would have considerable advantages in intermediate- and high-voltage circuits, as power and trigger circuits could be electrically separated by use of glass fiber cables. Besides high-voltage capability, such devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3cfa15b430e0beaf292ad597163a43
https://doi.org/10.1109/t-ed.1976.18506
https://doi.org/10.1109/t-ed.1976.18506
Autor:
M. Fullmann, D. Silber
Publikováno v:
1975 International Electron Devices Meeting.
Light activated power thyristors require relatively high optical trigger power, which can be supplied by expended GaAs light emitters only. The dv/dt sensitivity is an essential limitation for the reduction of minimum trigger power. Optimizing of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc70183335a3fe8b05e962a84c33872
https://doi.org/10.1109/iedm.1975.188901
https://doi.org/10.1109/iedm.1975.188901
Autor:
K.H. Glockner, M. Fullmann
Publikováno v:
Solid-State Electronics. 20:476-477
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8899da33639cacf87a1e0c9ef0062259
https://doi.org/10.1016/0038-1101(77)90146-0
https://doi.org/10.1016/0038-1101(77)90146-0
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.