Zobrazeno 1 - 10
of 71
pro vyhledávání: '"M. Florovic"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:5484-5489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee369b1be250905723568d0e6b9714b
https://doi.org/10.1109/ted.2022.3200630
https://doi.org/10.1109/ted.2022.3200630
Autor:
Lubica Stuchlikova, K. Bielak, Iván Lombardero, Damian Radziewicz, Beata Ściana, M. Florovic, Jarosław Serafińczuk, Wojciech Kijaszek, Wojciech Dawidowski, A. Kosa, Miroslav Mikolášek, Carlos Algora, Jaroslav Kováč, Jakub Drobný
Publikováno v:
Energies, Vol 14, Iss 4651, p 4651 (2021)
Energies; Volume 14; Issue 15; Pages: 4651
Energies; Volume 14; Issue 15; Pages: 4651
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f9540a277948ac479e1b945ee588c74
https://www.mdpi.com/1996-1073/14/15/4651
https://www.mdpi.com/1996-1073/14/15/4651
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
This work deals with the average temperature model of two AlGaN/GaN HEMTs exhibiting similar thermal but different electrical properties. Output I-V characteristics dependent on isothermal and thermal device properties allow comparison of output cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0e770098042bb1d04bb4ce31230b50
https://doi.org/10.1109/asdam50306.2020.9393862
https://doi.org/10.1109/asdam50306.2020.9393862
Autor:
Jaroslav Kováč, Andrej Vincze, M. Florovic, Edmund Dobročka, Jaroslava Skriniarova, Miroslav Mikolášek, I. Novotný
Publikováno v:
Journal of Electrical Engineering. 68:58-61
The present work reports the fabrication of p-Si/SiO2 /TiO2 and p-Si/SiO2 /TiO2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ac030b7bcc556b5ac72da164c52fc3e
https://doi.org/10.1515/jee-2017-0057
https://doi.org/10.1515/jee-2017-0057
Akademický článek
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Akademický článek
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Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this work an average channel temperature of power InAIN/GaN HEMT prepared on SiC substrate has been investigated using quasi-static 1-V characterization. The analysis of drain current change depending on source resistance, threshold voltage and sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc48771ac9bda5bb2a36501d8f8cc28
https://doi.org/10.1109/asdam.2018.8544600
https://doi.org/10.1109/asdam.2018.8544600
Publikováno v:
Journal of Electrical Engineering. 65:313-316
Electrical properties of recessed and non-recessed AlGaN/GaN Schottky diodes under off-state stress were investigated. The samples were consecutively stressed by the stepped negative bias (−60 V). Before and after the stress I−V and C−V charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8628477a30863399c789f16a2db2de26
https://doi.org/10.2478/jee-2014-0051
https://doi.org/10.2478/jee-2014-0051
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
This work deals with the trap analysis of the GaN-based structures using current time response on the voltage pulse applied to Schottky and ohmic contacts containing AlGaN and InAlN layers with different composition and thickness. Monitoring of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0fefb114754cf30138cd19316b53da
https://doi.org/10.1109/asdam.2016.7805926
https://doi.org/10.1109/asdam.2016.7805926
Publikováno v:
Journal of Electronic Materials. 41:3017-3020
Ni/AlGaN/GaN Schottky barrier diodes were characterized by electrical and optical measurements. Analysis of temperature-dependent (80 K to 550 K) current–voltage characteristics considering various transport mechanisms shows that the tunneling curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ba7b20717efc67dac2cda9156f4d51
https://doi.org/10.1007/s11664-012-2184-5
https://doi.org/10.1007/s11664-012-2184-5