Zobrazeno 1 - 10
of 14
pro vyhledávání: '"M. Florian Beug"'
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 66:1531-1538
This paper presents an improved calibration setup for static bridge standards with a carrier frequency supply voltage in the frequency range between 225 Hz and 5 kHz. In the past, the small bridge differential voltage in the mV/V range was calibrated
Publikováno v:
2018 Conference on Precision Electromagnetic Measurements (CPEM 2018).
We present a setup for linearity investigation of high precision bridge amplifiers as used for strain gauge transducer in static force and torque measurements. The setup allows to characterize bridge amplifiers in much more detail than the 0.1m V/V s
Publikováno v:
ACTA IMEKO. 8:19
Measurements of mechanical quantities are often carried out with transducers with a bridge output. The output signals are conditioned using bridge amplifiers. If dynamically changing quantities are going to be measured traceably, the bridge amplifier
Publikováno v:
2016 Conference on Precision Electromagnetic Measurements (CPEM 2016).
This paper presents an improved calibration setup for static bridge standards with carrier frequency supply voltage in the frequency range between 225 Hz and 5 kHz. In the past the small bridge differential voltage in the mV/V range was calibrated in
Publikováno v:
Journal of Physics: Conference Series. 1065:042010
Publikováno v:
Microelectronic Engineering. 80:444-447
This work presents the border trap generation characteristics in 8.5nm thick nitrided gate oxides for positive and negative Fowler-Nordheim stress polarities. These traps are located around a distance of ~2.3nm from either oxide interfaces and can be
Autor:
Harald Moser, M. Florian Beug
Publikováno v:
29th Conference on Precision Electromagnetic Measurements (CPEM 2014).
Publikováno v:
2012 Conference on Precision electromagnetic Measurements.
This article presents a newly at PTB developed dynamic bridge standard for frequency dependent calibration of strain gauge and piezo-resistive bridge amplifiers. The bridge standard operates in a ratiometric mode by picking up the dc bridge supply vo
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57 (6), pp.1253-1260
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57 (6), pp.1253-1260
In this paper, we give a thorough investigation of a new capacitance coupling coefficient measurement methodology (a back-bias method) that extracts the gate capacitance coefficient of floating-gate memory cells. This measurement methodology that uti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e81d25ca9119a50f203717ed7713268f
https://hal.archives-ouvertes.fr/hal-01959422
https://hal.archives-ouvertes.fr/hal-01959422
Autor:
Thomas Melde, Roman Knoefler, Malte Czernohorsky, Armin Tilke, M. Florian Beug, R. Hoffmann, Jan Paul
In this paper, we investigate the specific impact of an additional silicon oxide layer (sealing oxide) on top of the charge-trap nitride on the electrical performance of small dimension and large TANOS charge-trapping (CT) memory cells. We observe a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f9925dcdab8d455291e8823bc8df88e
https://publica.fraunhofer.de/handle/publica/221839
https://publica.fraunhofer.de/handle/publica/221839