Zobrazeno 1 - 10
of 40
pro vyhledávání: '"M. Feraille"'
Publikováno v:
Second EAGE Workshop on Machine Learning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec0029259aeb0ba98d94192fa3f98ac
https://doi.org/10.3997/2214-4609.202132005
https://doi.org/10.3997/2214-4609.202132005
Publikováno v:
First EAGE Digitalization Conference and Exhibition.
Summary In the last decade, Deep Learning applications to unstructured data, such as images and texts, has known significant technical progress and democratization. However successfully adapting these technologies to geological data and activities is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1775be65c9e3aeebdf9e56385008d591
https://doi.org/10.3997/2214-4609.202032047
https://doi.org/10.3997/2214-4609.202032047
Publikováno v:
Mineral Exploration Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f724426c02030043b16440ec8421dfee
https://doi.org/10.3997/2214-4609.202089014
https://doi.org/10.3997/2214-4609.202089014
Autor:
Clement Tavernier, M. Michaillat, Herve Jaouen, Yann-Michel Niquet, M. Feraille, Denis Rideau
Publikováno v:
Solid-State Electronics. 53:452-461
The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters – energy band shift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2b099b995267007db64babbebd3184
https://doi.org/10.1016/j.sse.2008.08.006
https://doi.org/10.1016/j.sse.2008.08.006
Autor:
P. Dollfus, Arnaud Bournel, Karim Huet, Denis Rideau, V. Aubry-Fortuna, Christian Rivero, Romain Delamare, M. Kasbari, Clement Tavernier, M. Feraille, Sylvain Blayac, Herve Jaouen
Publikováno v:
ESSDERC 2008 - 38th European Solid-State Device Research Conference.
A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the , and directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::811e1308647b35662e5466a344cf75f9
https://doi.org/10.1109/essderc.2008.4681741
https://doi.org/10.1109/essderc.2008.4681741
Publikováno v:
2008 International Conference on Simulation of Semiconductor Processes and Devices.
The confined states in [001]-oriented strained silicon layers embedded in oxide are investigated using dasiafull-zonepsila k.p analysis within the envelop function approximation and Tight-Binding (TB) model. Calculations of important transport parame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90b909b51d8d2841d7a2b4b243d20570
https://doi.org/10.1109/sispad.2008.4648248
https://doi.org/10.1109/sispad.2008.4648248
Publikováno v:
2008 9th International Conference on Ultimate Integration of Silicon.
The holes confined states in [001] -oriented 5 nm-thick relaxed silicon layer embedded in oxide are investigated using full-band k.p method within the envelop function approximation. Full-band calculations of important transport parameters - energy b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc0ac794d802b6816a3445c786ff8503
https://doi.org/10.1109/ulis.2008.4527141
https://doi.org/10.1109/ulis.2008.4527141
Publikováno v:
First Break. 25
Mathieu Feraille and Frederic Roggero of Institut Francais du Petrole (IFP) and Leandro Reis of Petrobras (Petrobras) present an innovative integrated methodology for constraining 3D stochastic reservoir models to well data and production history. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0ebbd2985725d997f9fe2ead4217a3
https://doi.org/10.3997/1365-2397.25.10.27672
https://doi.org/10.3997/1365-2397.25.10.27672
Autor:
Denis Rideau, A. Ghetti, M. Minondo, L. Ciampolini, Clement Tavernier, M. Feraille, Herve Jaouen
Publikováno v:
Physical Review B. 74
The electronic energy band structure of strained and unstrained Si, Ge, and $\mathrm{SiGe}$ alloys is examined in this work using a 30-level $\mathbit{k}∙\mathbit{p}$ analysis. The energy bands are at first obtained with ab initio calculations base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0099e6e0b4c9b352878ff0b6fcf511da
https://doi.org/10.1103/physrevb.74.195208
https://doi.org/10.1103/physrevb.74.195208
Publikováno v:
2006 International Conference on Simulation of Semiconductor Processes and Devices.
Recent works have shown that accurate bandstructure for strained silicon can be obtained using full-zone k.p method [1]. In this paper we have performed full-band Monte Carlo transport simulations in strained silicon using k.p band structure [1], and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea0dc71a80f90e584e00fc64bc92f49e
https://doi.org/10.1109/sispad.2006.282886
https://doi.org/10.1109/sispad.2006.282886