Zobrazeno 1 - 10
of 23
pro vyhledávání: '"M. F. Pas"'
Publikováno v:
Journal of The Electrochemical Society. 146:3827-3832
Application of an ultrahigh vacuum vertical batch reactor for selective chemical vapor deposition of hemispherical grain (HSG) polysilicon on planar and three-dimensional crown capacitor storage nodes is investigated. Comparison between selective HSG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c33a577dd10c0e2e6bc44c42a465e87
https://doi.org/10.1149/1.1392559
https://doi.org/10.1149/1.1392559
Autor:
Chien-Ting Lin, Che-Hua Hsu, Yao-Tsung Huang, M. F. Pas, Li-Wei Cheng, M. Ma, R. Wise, Yean-Kuen Fang, M. Ramin
Publikováno v:
IEEE Electron Device Letters. 28:831-833
For the first time, a simple CMOS fully silicided (FUSI) process achieving n/pMOS band-edge work function was demonstrated, which is fully compatible with conventional CMOS process. Dual-work-function CMOS FUSI, with a wide range of 800 mV, was achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59922552ef32e98d8ee968ae5a27a8a1
https://doi.org/10.1109/led.2007.903929
https://doi.org/10.1109/led.2007.903929
Autor:
I. A. Zupanets, О. А. Holubovska, O. O. Tarasenko, N. P. Bezuhla, M. F. Pasichnyk, S. O. Karabynosh, V. S. Kopcha, L. V. Moroz, H. V. Maksymchuk, O. Ya. Kobrynska, R. M. Fishchuk, D. I. Schulha, R. S. Morochkovskyj, M. S. Zoshchak
Publikováno v:
Zaporožskij Medicinskij Žurnal, Vol 23, Iss 5, Pp 636-643 (2021)
The aim of this work was to evaluate the effectiveness of quercetin addition to the treatment regimen for patients with COVID-19 associated pneumonia. Materials and methods. The effectiveness of two dosage forms of quercetin was studied in 200 pat
Externí odkaz:
https://doaj.org/article/b6d6fe9441604c568b487e19bca60d9b
Autor:
G. Burgel, P. G. Ribas, P. C. Ferreira, M. F. Passos, B. Santos, D. C. Savi, T. A. V. Ludwig, J. V. C. Vargas, L. V. Galli-Terasawa, V. M. Kava
Publikováno v:
Brazilian Journal of Biology, Vol 82 (2022)
Abstract The biotechnological potential of microalgae has been the target of a range of research aimed at using its potential to produce macromolecules with high added value. Particular focus has been given to biofuels' production, such as biohydroge
Externí odkaz:
https://doaj.org/article/05acac2a39ee4c3babc1b14b8f569ebc
Autor:
D. Lewis, Jean-Pierre Colinge, M. F. Pas, Tsu-Jae King, Shaofeng Yu, G. Gebara, J.R. Zaman, Weize Xiong, C.R. Cleavelin, Rick L. Wise, M. Gostkowski, Billy Nguyen, G. Smith
Publikováno v:
IEEE Electron Device Letters. 25:541-543
Hydrogen anneal is used during FinFET processing to round off the corners of the silicon fins prior to gate oxidation and to smooth the surface of the fin sidewalls. This procedure greatly improves gate leakage and, in addition, reduces the width of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e0566cbbbe6d0f343c935085fc6fc6
https://doi.org/10.1109/led.2004.832787
https://doi.org/10.1109/led.2004.832787
Publikováno v:
Journal of The Electrochemical Society. 142:3534-3538
The effect of initial high temperature annealing and gettering processes on the refresh time of high density dynamic random access memory devices was studied. The results show that under the present device processing conditions, both intrinsic and ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18a1dff2d128df8c008ad2e4998c579
https://doi.org/10.1149/1.2050017
https://doi.org/10.1149/1.2050017
Autor:
R.J. Zaman, C.R. Cleavelin, Ken Matthews, M. Gostkowski, Jean-Pierre Colinge, Shaofeng Yu, Tsu-Jae King, P. Patruno, C. Maleville, M. F. Pas, Weize Xiong, Rick L. Wise
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
Full/partial depletion effects are observed in n-channel FinFETs. Gate-induced floating body effect and degraded subthreshold slope are observed in partially depleted devices but not in fully depleted devices. Floating-body effects are observed in FD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1220c137abd9bb35da97c5db79880456
https://doi.org/10.1109/soi.2004.1391613
https://doi.org/10.1109/soi.2004.1391613
Autor:
Klaus Schruefer, Thomas Schulz, Weize Xiong, P. Patruno, Rick L. Wise, Rudy Quintanilla, Rownak J. Zaman, Sanjay K. Banerjee, C. Rinn Cleavelin, M. F. Pas
Publikováno v:
MRS Proceedings. 872
In this paper we present a comprehensive study of the impact of the Hydrogen (H2) annealing conditions on nano scale silicon fin structures. Hydrogen pressure was varied from 15Torr to 600Torr and anneal temperature was varied from 600°C to 900°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62a53495eb090ab4a35f490f22662637
https://doi.org/10.1557/proc-872-j3.1
https://doi.org/10.1557/proc-872-j3.1
Publikováno v:
Applied Physics Letters. 67:2308-2310
A detailed kinetic study of the C49 to C54 phase transformation in TiSi2 thin films was performed, to obtain the full time, temperature, and linewidth dependence of the fraction transformed during rapid thermal annealing on patterned deep‐sub‐mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a218f06211426fea210aa40ab2333d1
https://doi.org/10.1063/1.115135
https://doi.org/10.1063/1.115135
Autor:
Monte A. Douglas, Sunil V. Hattangady, George A. Brown, P.E. Nicollian, P.A. Tiner, M. F. Pas, Robert Kraft, Douglas T. Grider, John Kuehne
Publikováno v:
International Electron Devices Meeting. Technical Digest.
A simple and novel scheme is presented for the formation of /spl sim/4 nm gate dielectric films with nitrogen at the top (gate electrode/dielectric) interface. It consists of low-temperature, remote, high-density N/sub 2/-plasma nitridation of therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22d09b5f2778d15d1af978377ef4d693
https://doi.org/10.1109/iedm.1996.553846
https://doi.org/10.1109/iedm.1996.553846