Zobrazeno 1 - 9
of 9
pro vyhledávání: '"M. F. Marchant"'
Autor:
Theodore M. Lyszczarz, R. Wright, Michael W. Geis, James E. Butler, K. E. Krohn, D. D. Flechtner, M. F. Marchant, J.C. Twichell, S. Deneault, J. M. Lawless
Publikováno v:
Applied Physics Letters. 84:4620-4622
Epitaxial diamond with remarkably low p-type doping (1×1014–1×1017 cm−3) and exceptionally low compensation ∼1×1013 cm−3, has enabled the demonstration of a optically-switched conduction modulation of the epitaxial layer. Charge exchange b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8e8c04c73a5db02f36dd906d540e3a7
https://doi.org/10.1063/1.1757637
https://doi.org/10.1063/1.1757637
Autor:
S. Deneault, W. Geis, R. Sinta, D. R. Calawa, M. F. Marchant, W. Mowers, S. J. Spector, K. E. Krohn, Theodore M. Lyszczarz
Publikováno v:
Applied Physics Letters. 84:3729-3731
Single-crystal optical waveguides of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST), an organic material with a large electro-optic coefficient, have been obtained. DAST decomposes at its melting temperature, making its growth from the melt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069305e6d5be3d61ec860b2099de1ebe
https://doi.org/10.1063/1.1723697
https://doi.org/10.1063/1.1723697
Autor:
Theodore M. Bloomstein, Cihan Yilmaz, Sivasubramanian Somu, M. F. Marchant, Vladimir Liberman, K. E. Krohn, Yolanda Echegoyen, Mordechai Rothschild, Susan G. Cann, Ahmed Busnaina
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 22(38)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a15615b2104e3ba8cbc2eb29eb633d02
https://pubmed.ncbi.nlm.nih.gov/20626013
https://pubmed.ncbi.nlm.nih.gov/20626013
Autor:
Theodore M. Lyszczarz, Michael W. Geis, David L. Cooke, K. E. Krohn, S. Deneault, M. F. Marchant
Publikováno v:
MRS Proceedings. 891
This note reports on a surface field effect transistor, SFET, where the electron channel consists of the interface between vacuum and a Cs-doped glass, and an electrode on the back of the glass substrate is used as the gate. The device has a transcon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08a54902496c3cbd605f49135a6f4818
https://doi.org/10.1557/proc-0891-ee07-11
https://doi.org/10.1557/proc-0891-ee07-11
Autor:
Susan G. Cann, Christopher J. Vineis, J.W. Chludzinski, Mordechai Rothschild, N. N. Efremow, J.C. Twichell, Reuel B. Swint, D. E. Hardy, Douglas C. Oakley, George W. Turner, M. F. Marchant, Paul W. Juodawlkis, A. Napoleone, Theodore M. Bloomstein
Publikováno v:
2005 IEEE LEOS Annual Meeting Conference Proceedings.
InP/InGaAs/InP heterostructures were selectively grown in an array of 60 nm holes on a 90 nm pitch by MOCVD. The pattern was defined photolithographically directly in hydrogen silsesquioxane, a spin-on-glass, obviating the need for pattern transfer p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db23080976a7a903caa065fb1e11e38
https://doi.org/10.1109/leos.2005.1548307
https://doi.org/10.1109/leos.2005.1548307
Publikováno v:
Optics Express. 14:6434
Immersion interference lithography was used to pattern gratings with 22-nm half pitch. This ultrahigh resolution was made possible by using 157-nm light, a sapphire coupling prism with index 2.09, and a 30-nm-thick immersion fluid with index 1.82. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09902b2dc880b6bb521446d9f087f3b4
https://doi.org/10.1364/oe.14.006434
https://doi.org/10.1364/oe.14.006434
Autor:
S. J. Deneault, Theodore H. Fedynyshyn, I. Pottebaum, Mordechai Rothschild, Theodore M. Bloomstein, M. F. Marchant
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:2789
Liquid immersion interference lithography at 157nm has been used to print gratings of 27nm half pitch with a fluorine-doped fused silica prism having index of 1.66. In order to achieve these dimensions, new immersion fluids have been designed and syn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f704f6a4d9d6144ace9363fe276cdc
https://doi.org/10.1116/1.2366678
https://doi.org/10.1116/1.2366678
Autor:
K. E. Krohn, M. F. Marchant, S. Deneault, Theodore M. Lyszczarz, D. L. Cooke, Michael W. Geis
Publikováno v:
Applied Physics Letters. 87:192115
Surface emission cathodes reported here consist of two electrodes separated by ∼10μm on a negative-electron-affinity glass, Cs2Si4O9. The electrodes consist of a W film suspended over the insulator by a gap of 0–70 nm. When electron emission is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045ab315f91ce31c3ef20554188455e6
https://doi.org/10.1063/1.2130382
https://doi.org/10.1063/1.2130382
Autor:
Theodore M. Bloomstein, S. J. Deneault, N. N. Efremow, A. Napoleone, Douglas C. Oakley, D. E. Hardy, Paul W. Juodawlkis, R. B. Swint, Susan G. Cann, M. F. Marchant, Mordechai Rothschild
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:2617
Selective area homoepitaxial growth of InP in 50nm scale dense features has been demonstrated using hydrogen silsesquioxane (HSQ) as the growth mask. The HSQ growth mask was patterned lithographically using high resolution interference lithography at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2aeed603693a0acd4966fd9f8ff9a3c
https://doi.org/10.1116/1.2101692
https://doi.org/10.1116/1.2101692