Zobrazeno 1 - 10
of 19
pro vyhledávání: '"M. F. Lazarescu"'
Autor:
R. V. Ghita, Costel Cotirlan, Constantin Catalin Negrila, M. F. Lazarescu, Constantin Logofatu
Publikováno v:
Materials Science in Semiconductor Processing. 82:62-66
InGeNi ohmic contacts on n-type semi-insulating GaAs(110) cleaved surfaces were fabricated. Cleaving semiconductor single crystal ensures the obtaining of semiconductor surfaces almost ideal in terms of chemical purity and stoichiometry. The chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3c1ad3ce09b24cd3e03c6bb078fa7c
https://doi.org/10.1016/j.mssp.2018.02.022
https://doi.org/10.1016/j.mssp.2018.02.022
Autor:
Valentina Lazarescu, Catalin Negrila, M. F. Lazarescu, Mihai Anastasescu, Gianina Dobrescu, Mirela Enache
Publikováno v:
Journal of The Electrochemical Society. 165:H3008-H3017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984a936ab8d815308a9c99847ad4bb03
https://doi.org/10.1149/2.0031804jes
https://doi.org/10.1149/2.0031804jes
Autor:
Loredana Preda, M. F. Lazarescu, Valentina Lazarescu, Ana Maria Toader, Catalin Negrila, Sorana Ionescu, Mihai Anastasescu, Mirela Enache
Publikováno v:
Electrochimica Acta. 104:1-11
Self-assembled layers of 4,4′-thio-bis-benzene-thiolate spontaneously adsorbed on p-doped GaAs(1 1 1)A and GaAs(1 1 1)B electrodes were examined by EIS, XPS, and AFM investigations. XPS data provide evidence that (i) both As and Ga atoms are involv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56198850ad709b42d85eed0ae9392d42
https://doi.org/10.1016/j.electacta.2013.04.077
https://doi.org/10.1016/j.electacta.2013.04.077
Autor:
R. V. Ghita, Constantin-Catalin Negrila, Florica Frumosu, Lucian Trupina, M. F. Lazarescu, Constantin Logofatu, Costel Cotirlan
Publikováno v:
Journal of Nanomaterials, Vol 2016 (2016)
The depth composition of the thin layer alloy, AuGeNi, devoted to acting as an ohmic contact on n-GaAs(110) has been investigated by in situ XPS combined with Argon ion sputtering techniques. The fresh cleaved surfaces, supposed to be free of oxygen,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cb6d6a8d122872209e746645b98d391
https://doaj.org/article/750da00e46964a2f8adbfd9025707344
https://doaj.org/article/750da00e46964a2f8adbfd9025707344
Autor:
M. F. Lazarescu, Mirela Enache, Catalin Negrila, Mihai Anastasescu, Elizabeth Santos, Loredana Preda, Gianina Dobrescu, Valentina Lazarescu, Ionel Mercioniu
Publikováno v:
Electrochimica Acta. 77:8-16
The effects of the self-assembled 4,4′-thio-bis-benzenethiolate protected gold nanoclusters onto a p-GaAs (1 0 0) electrode were examined by AFM, XPS, SHG and EIS investigations. The AFM and XPS results revealed a well-ordered overlayer exhibiting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d1cea8001a9e8a75bffe74333924d6c
https://doi.org/10.1016/j.electacta.2012.04.161
https://doi.org/10.1016/j.electacta.2012.04.161
Publikováno v:
Electrochimica Acta. 56:863-866
Electrochemical behavior of hemin on p-GaAs(1 0 0) electrodes was examined by cyclic voltammetry (CV) and impedance spectroscopy (EIS) in phosphate buffer solutions (PBS) at pH 7.45. CV investigations in 0.6 mM hemin in PBS revealed a pair of reversi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf17c93210fac12fac7237ee7fdd986e
https://doi.org/10.1016/j.electacta.2010.09.083
https://doi.org/10.1016/j.electacta.2010.09.083
Autor:
M. F. Lazarescu, Costel Cotarlan, Constantin Logofatu, C. Vasiliu, Ana Emandi, Catalin Constantinescu, Catalin Negrila
Publikováno v:
Applied Surface Science. 255:5480-5485
Thin films based on two different metal–organic systems are developed by MAPLE and their nonlinear optical applications are explored. A complex of o,o′-dihydroxy azobenzene with Cu 2+ cation is found to organize as a non-central symmetric crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7724733c0ca901e31c05821f4eb17ff
https://doi.org/10.1016/j.apsusc.2008.10.012
https://doi.org/10.1016/j.apsusc.2008.10.012
Publikováno v:
Materials Science in Semiconductor Processing. 11:394-397
The experimental studies on III–V semiconductor compounds surface passivation phenomena are mainly dedicated to solve some technological problems as those regarding the ways to keep the chemical stability of native oxides on surfaces. Self-assemble
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9057759a413990dd0be327d41e5efd8e
https://doi.org/10.1016/j.mssp.2008.11.012
https://doi.org/10.1016/j.mssp.2008.11.012
Autor:
Constantin Logofatu, M. F. Lazarescu, Catalin Negrila, C. Cotirlan, A. S. Manea, F. Ungureanu, R. V. Ghita
Publikováno v:
Journal of Crystal Growth. 310:1576-1582
Angle-resolved X-ray photoelectron spectroscopy (ARXPS) analysis has been performed on GaAs (1 0 0) surfaces in different conditions as naturally oxidized, Ar + ion sputtering ( E =1–5 keV) and chemical etching in H 2 SO 4 /H 2 O 2 /H 2 O (3:1:1).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2c4e03ea2f92d484c24f03778edc83
https://doi.org/10.1016/j.jcrysgro.2007.11.001
https://doi.org/10.1016/j.jcrysgro.2007.11.001
Publikováno v:
Electrochimica Acta. 49:4231-4238
Second harmonic generation from n-GaAs(1 0 0) electrodes in sulfuric acid solution has been investigated at an incident wavelength of 1064 nm over a potential range where Faradaic processes are excluded. In the p-in/p-out polarization configuration,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06229765f86833ed3b937f0625b90316
https://doi.org/10.1016/j.electacta.2004.04.017
https://doi.org/10.1016/j.electacta.2004.04.017