Zobrazeno 1 - 8
of 8
pro vyhledávání: '"M. F. Fyhn"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :103-107
Monte-Carlo simulations of 2-MeV α-particle channeling in Si 1− x Sn x alloys with 0⩽ x ⩽1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si 0.95 Sn 0.05 layers grown by molecular beam epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f8cad1be4464309f3b9f2841aa9f53a
https://doi.org/10.1016/s0168-583x(99)01048-4
https://doi.org/10.1016/s0168-583x(99)01048-4
Publikováno v:
Physical Review B. 60:5770-5777
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc201bec74fe0f6ce13e27e40de532f
https://doi.org/10.1103/physrevb.60.5770
https://doi.org/10.1103/physrevb.60.5770
Publikováno v:
Applied Physics A: Materials Science & Processing. 68:259-262
Snx (0.01≤x≤0.04) layers on Si(001) and relaxed Si-Ge substrates. The Si1-xSnx layers were investigated using Rutherford backscattering spectrometry, atomic force microscopy, transmission electron microscopy and preferential-etching experiments.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e91d8d624e5901f67ec39c7e90701b9c
https://doi.org/10.1007/s003390050885
https://doi.org/10.1007/s003390050885
Publikováno v:
Applied Physics Letters. 69:394-396
The surface morphology and bulk structure of both strained (0.01≤x≤0.053) and strain‐free Si1−xSnx (x=0.055) layers grown by molecular beam epitaxy on (001) Si and Si1−yGey substrates have been investigated by atomic force and transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a99b2c9ad14878fa1cfefd2eb8978bd2
https://doi.org/10.1063/1.118072
https://doi.org/10.1063/1.118072
Publikováno v:
Applied Physics Letters. 63:3476-3478
Solid phase epitaxial regrowth of implantation‐amorphized, relaxed Si0.75Ge0.25 alloy layers grown by molecular beam epitaxy on compositionally graded buffer layers was investigated with ion channeling techniques. The amorphization was done by Ge i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::696a43286b36d9191db47bbaf1cdd37c
https://doi.org/10.1063/1.110125
https://doi.org/10.1063/1.110125
Publikováno v:
MRS Proceedings. 373
Solid phase epitaxial regrowth of ion-implanted relaxed Si1-xGex layers was studied as a function of alloy composition (0.15< x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f4d49e1160f90db3a88dc6a1baf888b
https://doi.org/10.1557/proc-373-505
https://doi.org/10.1557/proc-373-505
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:1777
The thermal stability of high quality, strained Si1−xSnx, 2.5%⩽x⩽5%, grown by molecular beam epitaxy on Si 〈001〉 substrates has been investigated by Rutherford backscattering spectrometry and transmission electron microscopy. As a result of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef0ff1f6eee3ab2f62b78692d498aba
https://doi.org/10.1116/1.590089
https://doi.org/10.1116/1.590089
Publikováno v:
Scopus-Elsevier
Recrystallisation of amorphous Si 1− x Ge x alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and time resolved reflectivity (TRR). Arrhenius behaviour was observed for the crystallisation velocity and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcb6fec4ae601bf5b43872c0c2a09c12
http://www.scopus.com/inward/record.url?eid=2-s2.0-0008055118&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0008055118&partnerID=MN8TOARS
