Zobrazeno 1 - 6
of 6
pro vyhledávání: '"M. F. Doemling"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:232-236
A quartz crystal microbalance (QCM) has been used for etching yield measurements in a low energy ion beam system. The goal is to obtain etching yields for ion energies below 150 eV for various ion chemistries and target materials. Typical beam curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ef54ea72c803956d59c93baf127e83
https://doi.org/10.1116/1.582139
https://doi.org/10.1116/1.582139
Autor:
M. Schaepkens, N. R. Rueger, M. F. Doemling, T. E. F. M. Standaert, JJ Beulens, Gottlieb S. Oehrlein
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2492-2502
Selective etching of SiO2 over polycrystalline silicon has been studied using CHF3 in an inductively coupled plasma reactor (ICP). Inductive powers between 200 and 1400 W, as well as pressures of 6, 10, and 20 mTorr were used in this study of the etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9e1278c24db730a237318056df5973
https://doi.org/10.1116/1.581987
https://doi.org/10.1116/1.581987
Autor:
P. J. Matsuo, T. E. F. M. Standaert, Gottlieb S. Oehrlein, M. F. Doemling, N. R. Rueger, M. Schaepkens, B. E. E. Kastenmeier
Publikováno v:
IBM Journal of Research and Development. 43:181-197
Pattern transfer by plasma-based etching is one of several key processes required for fabricating silicon-based integrated circuits. We present a brief review of elementary plasma-etching processes...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2baf73d499b8a400823586e7b3d36868
https://doi.org/10.1147/rd.431.0181
https://doi.org/10.1147/rd.431.0181
Autor:
JJ Beulens, M. Schaepkens, N. R. Rueger, T. E. F. M. Standaert, J. M. Mirza, Gottlieb S. Oehrlein, M. F. Doemling
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1881-1889
It has been found that in the etching of SiO2 using CHF3 in an inductively coupled plasma reactor of the planarized coil design, a thin steady state fluorocarbon film can play an important role in determining the rate of etching. This etching is enco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a77f5d5bdfafae319f3c6109a3efd4
https://doi.org/10.1116/1.580655
https://doi.org/10.1116/1.580655
Publikováno v:
Applied Physics Letters. 68:10-12
The slowdown of the oxide etch rate with width of submicrometer structures is known as reactive ion etching (RIE) lag and has been explained by ion shadowing and differential charging of the sidewalls, among other effects [R. A. Gottscho and co‐wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7529ddbbdf0155ab2f82ce2705e7aed
https://doi.org/10.1063/1.116772
https://doi.org/10.1063/1.116772
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:1998
The evolution of integrated circuits into the ultralarge scale integrated regime takes today’s 0.35 μm circuit design rules to even smaller values of 0.18 μm and beyond. As a consequence, photoresist masks are becoming thinner and even more prone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8870c5d06ecaefcc7f3af135f88ec9d3
https://doi.org/10.1116/1.590120
https://doi.org/10.1116/1.590120