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pro vyhledávání: '"M. Errai"'
Akademický článek
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Publikováno v:
Exploratory Materials Science Research. 1:067-073
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb58b49c1b104fc658061d4cf36e9d94
https://doi.org/10.47204/emsr.1.1.2020.067-073
https://doi.org/10.47204/emsr.1.1.2020.067-073
Autor:
Abdelhamid El Kaaouachi, Abdellatif El Oujdi, M. Errai, Asmaa Chakhmane, Hassan El Idrissi, Adil Echchelh
Publikováno v:
Journal of the Korean Physical Society. 75:389-393
In this work, we conducted an investigation concerning low-temperature electrical transport phenomena in a two-dimensional (2D) GaAs hole gas. The different carrier densities of the sample locate them on the insulating side of the metal-insulator tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0062fbe2ff01ad3124824f219cc5ccd5
https://doi.org/10.3938/jkps.75.389
https://doi.org/10.3938/jkps.75.389
Publikováno v:
Chinese Journal of Physics. 55:2283-2290
Experimental results on resistivity of the insulating samples 70Ge: Ga p-type at low temperatures has been analyzed in the insulating side of the Metal–Insulator Transition (MIT). The resistivity measurements were obtained in the temperature range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de8dda4772b82d3e42a46765363e3876
https://doi.org/10.1016/j.cjph.2017.09.013
https://doi.org/10.1016/j.cjph.2017.09.013
Publikováno v:
Journal of Physics and Chemistry of Solids. 74:1349-1354
We investigated the temperature dependence of resistivity of a high mobility two-dimensional holes system grown on the (311) GaAs surface in the absence of the magnetic field near the metal–insulator transition. The Coulomb hopping was found in a w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4308f17968b5d29afb7fb1f06ac6dfff
https://doi.org/10.1016/j.jpcs.2013.05.004
https://doi.org/10.1016/j.jpcs.2013.05.004
Autor:
A. Sybous, A. Narjis, S. Dlimi, G. Biskupski, M. Errai, E. Daoudi, A. El kaaouachi, L. Limouny
Publikováno v:
Materials Science in Semiconductor Processing. 16:1257-1261
Electrical transport properties of La0.67Sr0.33MnO3 polycrystalline thin films are studied in the temperature range 13−300 K and in magnetic fields up to 3 kOe. It is found that the resistivity of the sample with ellipsoidal grains exhibits an insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83397bd3eefc346bd891f4f0ffb246cd
https://doi.org/10.1016/j.mssp.2013.01.004
https://doi.org/10.1016/j.mssp.2013.01.004
Autor:
G. Biskupski, M. Errai, S. Dlimi, A. El kaaouachi, L. Limouny, A. Narjis, E. Daoudi, A. Sybous
Publikováno v:
Physica B: Condensed Matter. 419:7-10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80cd2a7628dba66eec181c8157ede83
https://doi.org/10.1016/j.physb.2013.03.009
https://doi.org/10.1016/j.physb.2013.03.009
Akademický článek
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Autor:
M. Errai, A. Sybous, A. Zatni, L. Limouny, S. Dlimi, A. El Kaaouachi, H. El Idrissi, E. Daoudi, A. Narjis
Publikováno v:
AIP Conference Proceedings.
In the reference [J. Phys. C: Solid State Phys., 16 (1983) 6491-6498], Mobius et al. studied the low temperature transport in amorphous Si1−xCrx films. They have shown that for the conductivity smaller than 270± 50 Ω−1cm−1, the transport shou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96cb13c0770ef7f770aed90139179898
https://doi.org/10.1063/1.4860638
https://doi.org/10.1063/1.4860638
Autor:
H. El Idrissi, M. Errai, A. Narjis, S. Dlimi, E. Daoudi, A. Sybous, A. Zatni, L. Limouny, A. El Kaaouachi
Publikováno v:
AIP Conference Proceedings.
In the ballistic regime where kBTτ / ħ ≥1, the temperature dependence of the metallic conductivity in a two-dimensional hole system of gallium arsenide, is found to change non-monotonically with the degree of spin polarization. In particular, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c60c97e40942b5ef33abcd45efdfd381
https://doi.org/10.1063/1.4860642
https://doi.org/10.1063/1.4860642