Zobrazeno 1 - 10
of 204
pro vyhledávání: '"M. El Kurdi"'
Autor:
A. Elbaz, M. El Kurdi, A. Aassime, S. Sauvage, X. Checoury, I. Sagnes, C. Baudot, F. Boeuf, P. Boucaud
Publikováno v:
APL Photonics, Vol 3, Iss 10, Pp 106102-106102-9 (2018)
Strain engineering is a powerful approach in micro- and optoelectronics to enhance carrier mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics. The dielectric stressors and bonding interfaces used for strain
Externí odkaz:
https://doaj.org/article/5a6b2213291542cbbe78f998f9e2a053
Autor:
Rami Y. Morjan, Said M. El-Kurdi, Jannat N. Azarah, Neda A. Eleiwa, Omar S. Abu-Teim, Adel M. Awadallah, James Raftery, John M. Gardiner
Publikováno v:
Acta Crystallographica Section E: Crystallographic Communications, Vol 74, Iss 9, Pp 1362-1365 (2018)
Trimethyl citrate, C9H14O7 (systematic name: trimethyl 2-hydroxypropane-1,2,3-tricarboxylate), 2, was prepared by the esterification of citric acid and methanol in the presence of thionyl chloride at 273 K. The bond lengths and angles in 2 compare cl
Externí odkaz:
https://doaj.org/article/35880002a57d45478dfb347045f5d885
Autor:
J. Chrétien, Q. M. Thai, M. Frauenrath, L. Casiez, A. Chelnokov, V. Reboud, J. M. Hartmann, M. El Kurdi, N. Pauc, V. Calvo
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2022, 120 (5), pp.051107. ⟨10.1063/5.0074478⟩
Applied Physics Letters, 2022, 120 (5), pp.051107. ⟨10.1063/5.0074478⟩
International audience; GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2% of Sn. We report a threshold of 3:27MWcm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d95522775e7a2348e016e4d53f84364c
https://hal.science/hal-04023342
https://hal.science/hal-04023342
Akademický článek
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Publikováno v:
Journal of Electronic Materials. 48:4674-4678
Ge emerges as a good candidate for the active layer in optoelectronic devices and is compatible with complementary metal oxide semiconductor technology. As the Ge band structure exhibits an indirect band gap with a small difference in energy between
Autor:
M. Gromovyi, M. El Kurdi, X. Checoury, E. Herth, F. Tabataba-Vakili, N. Bhat, A. Courville, F. Semond, P. Boucaud
Publikováno v:
Optics Express. 30:20737
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultra-violet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a pho
Autor:
A. Bjelajac, M. Gromovyi, E. Sakat, B. Wang, G. Patriarche, N. Pauc, V. Calvo, P. Boucaud, F. Boeuf, A. Chelnokov, V. Reboud, M. Frauenrath, J.-M. Hartmann, M. El Kurdi
Publikováno v:
Optics Express. 30:3954
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn.
Autor:
Xavier Checoury, Nicolas Pauc, Emilie Sakat, Isabelle Sagnes, Alexei Chelnokov, K. Pantzas, C. Villebasse, A. Durnez, Vincent Calvo, Frederic Boeuf, M. El Kurdi, Etienne Herth, Gilles Patriarche, Binbin Wang, J.M. Hartmann, Vincent Reboud, Anas Elbaz, Jérémie Chrétien, Lara Casiez
Publikováno v:
2020 IEEE Photonics Conference (IPC).
We fabricated a Ge 0.92 Sn 0.08 micro-disk laser with a lasing threshold as low as 20-30 kW/cm2 at 75 K. A specific etching process was developed to remove the dense array of misfit dislocations from the gain medium. Further surface treatments and pa
Autor:
N. von den Driesch, Zoran Ikonic, Isabelle Sagnes, Anas Elbaz, Detlev Grützmacher, M. El Kurdi, Sébastien Sauvage, Dan Buca, Philippe Boucaud, Xavier Checoury, J.M. Hartmann, Konstantinos Pantzas, Gilles Patriarche, Frederic Boeuf, Etienne Herth
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. T
Autor:
Jean-Yves Duboz, Xavier Checoury, Stephanie Rennesson, Sébastien Sauvage, Laetitia Doyennette, Bruno Gayral, Fabrice Semond, Benjamin Damilano, Farsane Tabataba-Vakili, M. El Kurdi, Thierry Guillet, Christelle Brimont, Iännis Roland, Philippe Boucaud, Julien Brault, Eric Frayssinet
Publikováno v:
Frontiers in Optics + Laser Science APS/DLS.
We present our progresses towards active photonic circuits based on III-nitride semiconductors epitaxially grown on silicon. We study in particular the critical coupling of lasing InGaN/GaN microdisks to adjacent suspended waveguides.