Zobrazeno 1 - 10
of 69
pro vyhledávání: '"M. Eichfelder"'
Autor:
M. Eichfelder, Robert Roßbach, Wolfgang-Michael Schulz, Peter Michler, Michael Jetter, M. Wiesner, S. Weidenfeld
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:724-729
We present experimental investigations of the transverse beam profile and polarization characteristics of GaInP-based oxide-confined vertical-cavity surface-emitting lasers in dependence on the oxide aperture size, mesa size, current, and temperature
Publikováno v:
Journal of Crystal Growth. 315:123-126
We demonstrate electrically pumped laser light emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in an (Al x Ga 1―x ) 0.51 In 0.49 P matrix lattice matched to GaAs. The structures were fabricated by metal-o
Autor:
Michael Jetter, M. Eichfelder, C. A. Kessler, Wolfgang-Michael Schulz, M. Reischle, Robert Roßbach, Peter Michler
Publikováno v:
Journal of Crystal Growth. 315:127-130
We demonstrate electrical pumping of self-assembled InP/Ga 0.51 In 0.49 P quantum dots embedded in a p-i-n resonant-cavity-diode structure with emission in the red spectral region. A high aluminum containing Al 0.98 Ga 0.02 As layer allows wet therma
Autor:
M. Eichfelder, Thomas Schwarzbäck, Wolfgang-Michael Schulz, Robert Roßbach, Michael Jetter, Peter Michler
Publikováno v:
Applied Physics B. 102:789-794
We present a vertical external cavity surface-emitting laser system based on a multi-quantum-well structure with 20 compressively strained GaInP quantum wells for an operation wavelength of around 665 nm with a monolithic integrated distributed Bragg
Autor:
Robert Roßbach, Wolfgang-Michael Schulz, G. J. Beirne, M. Reischle, M. Eichfelder, Peter Michler, Michael Jetter
Publikováno v:
Journal of Crystal Growth. 310:5098-5101
We demonstrate the growth of electrically driven InP/AlGaInP quantum dots embedded in a p–i–n diode structure emitting in the red to orange spectral region at room temperature. We observed an increase in emission wavelength by decreasing the quan
Autor:
M. Reischle, M. Eichfelder, Robert Roßbach, Wolfgang-Michael Schulz, Peter Michler, M. Wiesner, Michael Jetter
Publikováno v:
Journal of Crystal Growth. 315:131-133
In this letter, we report on laser light emission, in the red spectral range, of electrically pumped self-assembled InP quantum dots which were embedded in a microcavity structure realized by monolithically grown highly reflective AlGaAs distributed
Autor:
Christopher Gies, M. Eichfelder, Wolfgang-Michael Schulz, Frank Jahnke, M. Reischle, F. Hargart, Michael Jetter, Matthias Florian, Paul Gartner, Peter Michler, C. A. Kessler, Robert Roßbach
Publikováno v:
Physical Review B. 86
We present excitation-pulse-width- and pump-power-dependent microelectroluminescence and photon statistics measurements on electrically driven single-photon devices based on InP/AlGaInP quantum dots (QDs). For an excitation regime far below QD satura
Publikováno v:
SPIE Proceedings.
In the current work, we show a detailed analysis of the transverse beam profile and polarization characteristics of devices with one and three oxide apertures. A Gaussian transverse beam profile is achieved with an oxide aperture diameter of less tha
Autor:
Michael Jetter, Peter Michler, M. Eichfelder, Robert Roßbach, Thomas Schwarzbäck, Hermann Kahle
Publikováno v:
SPIE Proceedings.
The wide range of applications in biophotonics, television or projectors, spectroscopy and lithography made the vertical external cavity surface-emitting lasers an important category of power scalable lasers. The possibility of bandgap engineering, i
Autor:
Robert Rossbach, C. A. Kessler, M. Eichfelder, Peter Michler, Wolfgang-Michael Schulz, Michael Jetter, M. Reischle
Publikováno v:
Scopus-Elsevier
Compact and efficient single-photon sources are key components for several future applications, e.g in quantum cryptography, random number generators, and for a future standard of optical brightness. To date, commercial single-photon detectors provid