Zobrazeno 1 - 10
of 12
pro vyhledávání: '"M. E. Zvanut"'
Autor:
M. E. Zvanut, Jackson P. Hanle, Subash Paudel, Ryan Page, Chandrashekhar Savant, Yongjin Cho, H. Grace Xing, Debdeep Jena
Publikováno v:
AIP Advances, Vol 13, Iss 12, Pp 125210-125210-6 (2023)
High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1
Externí odkaz:
https://doaj.org/article/b28ce15f4d644267a6be8f39c5f98d73
Publikováno v:
APL Materials, Vol 10, Iss 2, Pp 021103-021103-7 (2022)
Gallium oxide when doped with Mg becomes semi-insulating and can be useful for power electronic devices. The present work investigates optical transitions of neutral Mg (MgGa0) using photoinduced electron paramagnetic resonance spectroscopy, a variat
Externí odkaz:
https://doaj.org/article/878432099ac44cb68fd7a2b192d0ccf2
Publikováno v:
Journal of Applied Physics. 132:025701
Investigation of intrinsic defects such as gallium vacancies (VGa) and their interactions with extrinsic defects like Fe in β-Ga2O3 is crucial for the development of devices. Photoinduced electron paramagnetic resonance (photo-EPR) experiments are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b58ab3483d59e967a6ee53fdfb0fa1
https://doi.org/10.1063/5.0100352
https://doi.org/10.1063/5.0100352
Autor:
T. L. Chen, M. E. Zvanut
Publikováno v:
Applied Physics Letters. 69:28-30
Electron paramagnetic resonance data demonstrate that Eδ′, a radiation‐induced defect consistently found in buried oxide films, can also be generated in nonburied oxides after heat treatment in a sufficiently dry ambient. The center appears in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f2f8eca6a8aafe5195b5f6672b5bed
https://doi.org/10.1063/1.118107
https://doi.org/10.1063/1.118107
Autor:
M. E. Zvanut
Publikováno v:
SiC Power Materials ISBN: 9783642058455
Electron paramagnetic resonance (EPR) spectroscopy is a powerful tool for studying the physical and chemical structure of point defects in crystalline semiconductors. Investigations throughout the past few decades have provided detailed descriptions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eca2b2ce13c74f5eab3f58c4da41e7c
https://doi.org/10.1007/978-3-662-09877-6_7
https://doi.org/10.1007/978-3-662-09877-6_7
Autor:
M. E. Zvanut, R. E. Stahlbush
Publikováno v:
Wiley Encyclopedia of Electrical and Electronics Engineering
The sections in this article are 1 Fabrication and Materials Issues 2 Extended Defects 3 Electrical Characterization 4 Electron Paramagnetic Resonance 5 Summary and Future Trends Keywords: silicon on insulator (SOI); SIMOX; bonded SOI (BSOI); charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e8bc8a5d8d5508c7db2e5e028db311
https://doi.org/10.1002/047134608x.w3227
https://doi.org/10.1002/047134608x.w3227
Publikováno v:
MRS Proceedings. 416
Chemical incorporation of impurities into diamond films is important for both electronic and optoelectronic applications. The study reveals the effect of incorporated dopants in diamond films using electron paramagnetic resonance (EPR), a non-destruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::672e3b6547a44a04a2e34fb10749c0be
https://doi.org/10.1557/proc-416-367
https://doi.org/10.1557/proc-416-367
Publikováno v:
MRS Proceedings. 406
This paper reports etching results supporting the identification of the SG1 center as a germanium dangling bond defect at the interface between an oxide and crystalline SiGe. The presence of this defect is significant because, like an analogous cente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07acab8f017e63e1524fec6c19af479e
https://doi.org/10.1557/proc-406-573
https://doi.org/10.1557/proc-406-573
Publikováno v:
Journal of Applied Physics. 107:083513
The optical absorption of defect centers in SrTiO3 substrates grown by the Vernuil method are investigated using photoinduced electron paramagnetic resonance (photo-EPR) at room temperature. As received samples revealed EPR signatures for Fe3+, Cr3+,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f102efff90777f3d9efb5627a59a4a3
https://doi.org/10.1063/1.3372760
https://doi.org/10.1063/1.3372760
Autor:
F. J. Feigl, M. E. Zvanut
Publikováno v:
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ISBN: 9781489907769
Current and capacitance voltage data obtained using a metal-sputtered oxide-semiconductor capacitor revealed trapping centers similar to those observed in irradiated thermal oxides. A positive charge density of approximately 5 × 1012cm−2 exists in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29f333c150cde1a55f6fee3510a121b8
https://doi.org/10.1007/978-1-4899-0774-5_58
https://doi.org/10.1007/978-1-4899-0774-5_58