Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. E. Paramonov"'
Autor:
Lyudmila V. Filippenko, M. Yu. Fominsky, A.B. Ermakov, Valery P. Koshelets, P. N. Dmitriev, M. E. Paramonov
Publikováno v:
Physics of the Solid State. 62:1534-1538
The main parameters of the tunnel barrier of Josephson Nb/AlOx/Nb and Nb/AlN/Nb junctions are estimated in a wide range of the current density using the Simmons method. The dependences of the tunnel barrier height and width of the resistivity are det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf1277761c78a49ce93a8aa37b0daae
https://doi.org/10.1134/s1063783420090231
https://doi.org/10.1134/s1063783420090231
Autor:
M. E. Paramonov, Valery P. Koshelets, M. Yu. Fominsky, P. N. Dmitriev, Lyudmila V. Filippenko
Publikováno v:
Journal of Communications Technology and Electronics. 64:1144-1148
—The parameters of the tunneling barrier of Nb/Al–AlOx/Nb Josephson junctions were estimated in a wide range of current densities using the Simmons method. It is shown that with an increase in resistivity RnS from 60 to 2100 Ω μm2 (a reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c63eef0ab4810bb0275969e22efbafe
https://doi.org/10.1134/s1064226919100115
https://doi.org/10.1134/s1064226919100115
Autor:
Andrey Khudchenko, P. N. Dmitriev, M. E. Paramonov, Valery P. Koshelets, K. I. Rudakov, Andrey M. Baryshev
Publikováno v:
Journal of Communications Technology and Electronics, 61(12), 1395-1399. Springer
Planar microwave devices that make it possible to determine parameters of fabricated layers are developed and produced. The parameters are needed for correct numerical simulation based on the Mattis-Bardeen theory and may differ from the tabulated pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81bc234e10d3345ecb2fd063c0be7727
https://doi.org/10.1134/S1064226916120202
https://doi.org/10.1134/S1064226916120202
Autor:
B. Neumeier, Edward Goldobin, M. E. Paramonov, Reinhold Kleiner, Valery P. Koshelets, Dieter Koelle, M. Yu. Fominsky
We demonstrate a high-frequency generator operating at ~200GHz based on flipping a semifluxon in a Josephson junction of moderate normalized length. The semifluxon spontaneously appears at the $\pi$ discontinuity of the Josephson phase artificially c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9af76433fe72ecf97bdf39ac372eceb
