Zobrazeno 1 - 7
of 7
pro vyhledávání: '"M. E. Lunnon"'
Publikováno v:
Journal of The Electrochemical Society. 134:2027-2030
Copper is shown to be inadvertently introduced as an impurity during the formation of silicon‐on‐insulator structures by high fluence oxygen implantation. Postimplantation annealing causes the copper to diffuse from the silicon surface through th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c8fb94fc058fe77f6274163a8f3994
https://doi.org/10.1149/1.2100812
https://doi.org/10.1149/1.2100812
Autor:
M. E. Lunnon, D. W. Greve
Publikováno v:
Journal of Applied Physics. 54:3278-3281
The microstructure and programming mechanism of an electrically programmable antifuse is described. The device consists of n+pn+ junctions in polycrystalline silicon programmed by applying voltage pulses to the two n+ terminals. High voltage electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd0b675e5648107a71c6d2bd15267cc
https://doi.org/10.1063/1.332438
https://doi.org/10.1063/1.332438
Autor:
M. E. Lunnon, M. Delfino
Publikováno v:
Journal of The Electrochemical Society. 132:435-440
Etude par microscopie electronique des zones amorphes produites par implantation par BCl + et BF 2 + . Etude comparative du recuit a 900°C pendant 30 minutes. Caracteristiques des diodes fabriquees
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c22ff1317123470993542c8a7c9c2030
https://doi.org/10.1149/1.2113860
https://doi.org/10.1149/1.2113860
Publikováno v:
Journal of The Electrochemical Society. 132:2473-2475
Obtention de diodes p-n peu profondes ayant de bonnes caracteristiques de fuite par recuit thermique rapide ou recuit dans un four de silicium implante par BF 2 + . Elimination des defauts residuels. Amelioration des caracteristiques des jonctions pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1edbcca491bda785bbc724553844a738
https://doi.org/10.1149/1.2113602
https://doi.org/10.1149/1.2113602
Publikováno v:
Applied Physics Letters. 45:1056-1058
A comparison has been made between ion implantation damage, implanted impurity profiles, and the dopant electrical characteristics in silicon implanted with boron fluoride and rapid annealed. The rapid anneal is accompanied by outdiffusion of fluorin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9d4ca49619d56712784474938aba23
https://doi.org/10.1063/1.95066
https://doi.org/10.1063/1.95066
Publikováno v:
Applied Physics Letters. 46:35-37
Rapid annealing of boron implanted (100) silicon has been used to fabricate p+‐n diodes. After an implant dose of 3×1015 ion cm−2 and a 1‐s anneal at 1100 °C, a sheet resistance of 40 Ω/⧠ is obtained. The junction depth is 0.34 μm, measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82710384bc8726e1ea8091c7ff7b3e37
https://doi.org/10.1063/1.95841
https://doi.org/10.1063/1.95841
Autor:
M. E. Lunnon, M. Delfino
Publikováno v:
Chemischer Informationsdienst. 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653c6d8f401ae6b6f46b026e1c83c346
https://doi.org/10.1002/chin.198523013
https://doi.org/10.1002/chin.198523013