Zobrazeno 1 - 10
of 167
pro vyhledávání: '"M. E. LEVINSHTEIN"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 17:397-400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6faf7bd07d5f458cd75c12c7f43db294
https://doi.org/10.1134/s1027451023020076
https://doi.org/10.1134/s1027451023020076
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:374-379
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a389a21c1b0c26cbdcdc8938037df96
https://doi.org/10.1134/s1027451022030260
https://doi.org/10.1134/s1027451022030260
Autor:
A. A. Lebedev, V. V. Kozlovski, M. E. Levinshtein, D. A. Malevsky, G. A. Oganesyan, A. M. Strel’chuk, K. S. Davydovskaya
Publikováno v:
Semiconductors. 56:189-194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3336aa32edab26208db7c70eb58d64da
https://doi.org/10.1134/s1063782622020099
https://doi.org/10.1134/s1063782622020099
Autor:
A. M. Strel’chuk, Leonid Fursin, P. A. Ivanov, A. V. Zubov, Vitalii V. Kozlovski, M E Levinshtein, Alexander A. Lebedev
Publikováno v:
Materials Science Forum. 1004:1074-1080
Impact of 15 MeV proton irradiation on electrical characteristics and low frequency noise has been studied in high-power vertical 4H-SiC MOSFETs of 1.2 kV-class at doses 1012 £ F £ 1014 cm-2. The maximum value of the field-effect mobility µFЕ dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6c02b53f0c689bd12663b78853acfd6
https://doi.org/10.4028/www.scientific.net/msf.1004.1074
https://doi.org/10.4028/www.scientific.net/msf.1004.1074
Autor:
S. L. RUMYANTSEV, N. PALA, M. S. SHUR, M. E. LEVINSHTEIN, P. A. IVANOV, M. ASIF KHAN, G. SIMIN, J. YANG, X. HU, A. TARAKJI, R. GASKA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74006583d402dacd103881a25b79163c
https://doi.org/10.1142/9789811252143_0039
https://doi.org/10.1142/9789811252143_0039
Publikováno v:
Materials
Materials, Vol 14, Iss 4976, p 4976 (2021)
Materials, Vol 14, Iss 4976, p 4976 (2021)
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::54a2e82c9eea3389e8e71d12fe036015
https://pubmed.ncbi.nlm.nih.gov/34501066
https://pubmed.ncbi.nlm.nih.gov/34501066
Autor:
Oleg Korolkov, Jana Toompuu, K. S. Davidovskaya, Vitali V. Kozlovski, N. Slepchuk, A. A. Lebedev, M. E. Levinshtein, Anatoly M. Strel'chuk
Publikováno v:
Technical Physics Letters. 46:287-289
The influence of proton irradiation at high temperatures (“hot” irradiation) on the capacitance–voltage and current–voltage characteristics of semiconductor devices based on silicon carbide has been studied for the first time. The experiments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd8ff71bdaceba1704fb7842890816d
https://doi.org/10.1134/s1063785020030244
https://doi.org/10.1134/s1063785020030244
Autor:
Vitali V. Kozlovski, Leonid Fursin, E. I. Shabunina, A. M. Strel’chuk, M E Levinshtein, Alexander A. Lebedev, P. A. Ivanov
Publikováno v:
Semiconductors. 53:1568-1572
Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8810a97f2d156ec3b8ea81c73c6ec05d
https://doi.org/10.1134/s1063782619160140
https://doi.org/10.1134/s1063782619160140
Publikováno v:
Semiconductors. 53:1409-1413
The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage (operating voltage 1700 V) 4H -SiC Schottky p-n diodes is studied in the microsecond range of the forward-current pulse duration. With increasing irradia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5773c19d4db2dbedbb7ee5ba528511
https://doi.org/10.1134/s1063782619100130
https://doi.org/10.1134/s1063782619100130
Autor:
K. S. Davydovskaya, A.E. Ivanov, M E Levinshtein, Alexander A. Lebedev, A. V. Zubov, Vitali V. Kozlovski, V.S. Yuferev
Publikováno v:
Radiation Physics and Chemistry. 185:109514
Impact of high temperature electron irradiation on the characteristics of power silicon carbide-based semiconductor devices was studied for the first time. Commercial 4H–SiC integrated Schottky diodes (JBS) with blocking voltage of 1700 V were irra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee2eaad44da736139daa0381626e236
https://doi.org/10.1016/j.radphyschem.2021.109514
https://doi.org/10.1016/j.radphyschem.2021.109514