Zobrazeno 1 - 10
of 29
pro vyhledávání: '"M. E. Kordesch"'
Autor:
Wojciech M. Jadwisienczak, Mohamed Dammak, Yuxuan Wang, J. Wang, T. Kallel, M. E. Kordesch, T. Koubaa, Sneha G. Pandya
Publikováno v:
Journal of Luminescence. 171:42-50
Optical properties of Er-doped AlN nanoparticles (NPs) synthesized by Inert Gas Condensation (IGC) on silicon (111) substrates were investigated. Transmission electron microscopy (TEM) and high resolution TEM (HR-TEM) were used to study the shapes, m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9343801e253ad4bc2964187c971f37f2
https://doi.org/10.1016/j.jlumin.2015.11.002
https://doi.org/10.1016/j.jlumin.2015.11.002
Autor:
Horst P. Strunk, Gerhard Frank, Hugh H. Richardson, S.B. Aldabergenova, Muhammad Maqbool, M. E. Kordesch
Publikováno v:
Journal of Non-Crystalline Solids. 352:1290-1293
We have investigated the optical activity of Ho 3+ ions in AlN layers in the as prepared and annealed states. The films were grown using RF magnetron sputtering in a pure nitrogen atmosphere. After annealing we observe strong characteristic Ho 3+ emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063ae407d6e975b70bb0359d4f94dd40
https://doi.org/10.1016/j.jnoncrysol.2005.11.120
https://doi.org/10.1016/j.jnoncrysol.2005.11.120
Autor:
Fong Kwong Yam, M. E. Kordesch, Kamarulazizi Ibrahim, Y. C. Lee, Zainuriah Hassan, Mat Johar Abdullah
Publikováno v:
Materials Chemistry and Physics. 84:369-374
The properties and application of gallium nitride (GaN) films grown on silicon at a low temperature (873 K) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (MOCVD) were investigated. Structural analysis re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76da2408b73e83b2adf86a0e3ea6c47e
https://doi.org/10.1016/j.matchemphys.2003.11.036
https://doi.org/10.1016/j.matchemphys.2003.11.036
Publikováno v:
Materials Letters. 63:2019-2021
A simple synthesis technique to grow ZnO micro-tubules in large quantities from ZnO powders in one step at ~ 1000 °C ± 50 °C is discussed. The micro-tubules were formed in the form of small chunks or ingots as well as sticking to the walls of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7713ee7d55b8f4d6b6a62d6400cfaf3f
https://doi.org/10.1016/j.matlet.2009.06.038
https://doi.org/10.1016/j.matlet.2009.06.038
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 1:153-155
Beryllium-nitride (BeN) thin films were prepared by sputtering a Be target in an atmosphere of pure nitrogen. The films were doped with samarium simply by placing a piece of Sm metal on the surface of the Be target. Under these deposition conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcdff6895820046848c2c1fc987e8f2b
https://doi.org/10.1002/pssr.200701082
https://doi.org/10.1002/pssr.200701082
Publikováno v:
physica status solidi (b). 250
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d354d1c4807f656a5e8be2d65417301
https://doi.org/10.1002/pssb.201370560
https://doi.org/10.1002/pssb.201370560
Publikováno v:
MRS Proceedings. 1290
Structural and magneto-optical properties of Ni-doped amorphous AlN layers (a-AlN) deposited by radio frequency (rf) sputtering on Silicon (001) substrates were investigated. The as-grown material exhibits weak ferromagnetic behavior as evidenced by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150d885dfd42917d525f6e32f684813a
https://doi.org/10.1557/opl.2011.16
https://doi.org/10.1557/opl.2011.16
Autor:
Savas Kaya, M. E. Kordesch, Aurangzeb Khan, Wojciech M. Jadwisienczak, Venkat Vuppuluri, H. Tanaka
Publikováno v:
MRS Proceedings. 1202
Magneto-optical properties of Ni- and Co-doped amorphous AlN thin films were investigated as a function of post grown annealing temperature using magneto-optical Kerr effect (MOKE) spectroscopy. The x-ray diffraction spectra confirmed that the as-gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1dd68d47965c6ff3b8298cf98aac07d
https://doi.org/10.1557/proc-1202-i05-06
https://doi.org/10.1557/proc-1202-i05-06
Autor:
Aurangzeb Khan, Wojciech M. Jadwisienczak, M. E. Kordesch, Saima Naz Khan, Ajay Sandeep Vemuru
Publikováno v:
MRS Proceedings. 1035
We report on the luminescence of rare earth (RE) (Sm, Er, Tm) ions doped ZnO films grown by the rf-magnetron sputtering technique. Samples were insitu doped with Sm ion or with Sm, Er, and Tm ions simultaneously without any intentional co-dopants and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9b34200b9687553c3b9e963197bd32
https://doi.org/10.1557/proc-1035-l11-19
https://doi.org/10.1557/proc-1035-l11-19
Autor:
Hugh H. Richardson, M. E. Kordesch
Publikováno v:
MRS Proceedings. 736
Wide bandgap semiconductors have been sputter deposited onto non-crystalline substrates, low melting point materials, including polymer fibers, textiles and glasses. The semiconductors are amorphous and can be deposited over large (square meter) area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::005da28b735d2875a61459faa0dad629
https://doi.org/10.1557/proc-736-d1.8
https://doi.org/10.1557/proc-736-d1.8