Výsledky vyhledávání - "M. E. Keeffe"

Autor: P. A. Montano, Michael J. Bedzyk, Paul F. Lyman, H. L. Hutchason, M. E. Keeffe, D. L. Marasco, D. A. Walko

Publikováno v: Surface Science. 561:248-260

Using multiple surface science techniques, we have investigated the structure of 0.3–1 Te monolayers adsorbed on Si(0 0 1). X-ray standing waves, low-energy electron diffraction, temperature-programmed desorption, and Auger electron spectroscopy sh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62da13aaa0dff0f96389d6c2e7598b8e
https://doi.org/10.1016/j.susc.2004.05.071

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Pairing of curved atomic steps at the extrema of periodic gratings on Si(001)

Autor: Jack M. Blakely, C. C. Umbach, M. E. Keeffe

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1830-1836

Scanning tunneling microscopy has been used to study the shape of curved steps at the extrema of periodic step arrays produced from gratings on Si(001). These steps are created by the overlap of the step density associated with the gratings with a ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89e8e5df0a22cd5dd460831322362171
https://doi.org/10.1116/1.578434

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Scanning tunneling microscopy of one‐dimensional periodic corrugated silicon surfaces

Autor: M. E. Keeffe, C. C. Umbach, Jack M. Blakely

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:1014-1019

A scanning tunneling microscope has been used to study atomic step arrays associated with periodically corrugated grating structures on Si(001). These gratings have repeat spacings of 1.5 and 2.0 μm, and amplitudes between 65 and 750 A. The change i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0265cff8bcd5f2f14844748e06d8b1c9
https://doi.org/10.1116/1.577568

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Scanning tunneling microscopy studies of phase separation on Si(001) surfaces with periodic step density

Autor: M. E. Keeffe, C. C. Umbach, Jack M. Blakely

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:721

Using photolithography and ultrahigh vacuum annealing, we have produced atomic step arrays on Si(001), where the number of steps per unit length normal to the [110] direction changes periodically. These arrays afford the opportunity to study step phe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2289a6eba78aec8e964338c746eaa557
https://doi.org/10.1116/1.585540

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