Zobrazeno 1 - 10
of 93
pro vyhledávání: '"M. E. Gross"'
Publikováno v:
Journal of Applied Physics. 87:2232-2236
The transition from sputtered Al to electroplated Cu interconnects for future microelectronic devices has led to an interest in understanding the relationships between the microstructure and texture of Cu that might impact electrical performance, sim
Autor:
Ken M. Takahashi, M. E. Gross
Publikováno v:
Journal of The Electrochemical Society. 146:4499-4503
Scaling analysis and finite element modeling of the governing transport equations are used to show that in the submicron features of damascene ultralarge scale integrated interconnect structures, diffusion of cupric ion and trace additives is the onl
Autor:
C. Lingk, M. E. Gross
Publikováno v:
Journal of Applied Physics. 84:5547-5553
Cu metallization for sub-0.25 μm interconnects marks not only a change in metallurgy from Al and a change in architecture from subtractive to damascene but also a major shift in deposition technology from sputtering to electroplating. A remarkable f
Publikováno v:
Journal of The Electrochemical Society. 142:L79-L82
The metallorganic tetrakis(dimethylamido)-titanium [Ti(NMe{sub 2}){sub 4}] reacts with electron cyclotron resonance plasma-activated nitrogen in the downstream region to form low resistivity crystalline TiN films at substrate temperatures as low as 1
For lithium-Sulfur (Li-S) batteries to be practical, economic and safe for powering electric vehicles more than 300 miles between charges the energy and cycle life must be improved. Li- S’s theoretical specific energy and energy density are (2,550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab2cde90b3dca32a4ae40f2626f135f
https://doi.org/10.2172/1038137
https://doi.org/10.2172/1038137
Publikováno v:
Journal of Applied Physics. 76:4377-4382
The use of a low oxidation state Ti compound, cyclopentadienyl cycloheptatrienyl titanium, (C5H5) Ti(C7H7) (CPCHT), as a potential source for TiN and Ti in plasma enhanced chemical vapor deposition processes has been investigated. This precursor prov
Publikováno v:
Journal of The Electrochemical Society. 141:849-853
High quality layers were deposited in an electron cyclotron resonance (ECR) plasma process at substrate temperatures between 100 and 600°C. Tetrakis(dimethylamido)‐titanium was used as the precursor and introduced into the downstream region of an
Publikováno v:
Scopus-Elsevier
Copper is a potential replacement for aluminum in future ultra large scale integrated (ULSI) circuits, due to its lower resistivity and better resistance to electromigration. Metal-organic chemical vapor deposition (MOCVD) of Cu offers advantages of
Autor:
M. E. Gross, V. M. Donnelly
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:66-77
Cu is receiving increasing attention as a replacement for Al in future Si ultra‐large‐scale integrated circuits due to its lower resistivity and potentially better reliability in terms of electromigration resistance and stress‐induced voiding.
Publikováno v:
ChemInform. 25
High quality layers were deposited in an electron cyclotron resonance (ECR) plasma process at substrate temperatures between 100 and 600°C. Tetrakis(dimethylamido)‐titanium was used as the precursor and introduced into the downstream region of an