Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. E. A. Shohini"'
Publikováno v:
Biosensors
The authors wish to thank Universiti Malaysia Perlis (UniMAP), Ministry of Science, Technology & Innovation (MOSTI) and Ministry of Higher Education for giving the opportunities to do this research in the Micro & Nano Fabrication Cleanroom. The appre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6961a531c0acf46bc7953a20bf09459
http://www.intechopen.com/articles/show/title/design-and-fabrication-of-nanowire-based-conductance-biosensor-using-spacer-patterning-techniq
http://www.intechopen.com/articles/show/title/design-and-fabrication-of-nanowire-based-conductance-biosensor-using-spacer-patterning-techniq
Autor:
U. Hashim, M. E. A. Shohini, Mohamad Rusop, Rihanum Yahaya Subban, Norlida Kamarulzaman, Wong Tin Wui
Publikováno v:
AIP Conference Proceedings.
A reversed spacer patterning technology using a sacrificial layer and a chemical vapor deposition (CVD) spacer layer has been developed, and is demonstrated to achieve sub‐50 nm structures with conventional dry etching. The minimum‐sized features
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d2d8ccaf176e3ad8280f57ff2dcea7f
https://doi.org/10.1063/1.3377877
https://doi.org/10.1063/1.3377877
Autor:
S. F. Abd. Rahman, U. Hashim, M. N. Md. Nor, A. M. Mohamed Nuri, M. E. A. Shohini, S. Salleh, Mohamad Rusop, Tetsuo Soga
Publikováno v:
AIP Conference Proceedings.
Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::719d8d49946f5bee723440ff892f3461
https://doi.org/10.1063/1.3160194
https://doi.org/10.1063/1.3160194
Autor:
N. H. Mohd. Noor, U. Hashim, M. E. A. Shohini, A. M. Mohamed Nuri, Mohamad Rusop, Tetsuo Soga
Publikováno v:
AIP Conference Proceedings.
In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different oxide thickness), and we show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbef1d3f5e5f3705e418c7fe80bc0ac5
https://doi.org/10.1063/1.3160193
https://doi.org/10.1063/1.3160193