Zobrazeno 1 - 6
of 6
pro vyhledávání: '"M. E. A. Samsudin"'
Autor:
Zainuriah Hassan, M.A.A.Z. Md Sahar, M.A. Ahmad, M. E. A. Samsudin, Yusnizam Yusuf, N.A. Hamzah, Rahil Izzati Mohd Asri, A.M. Hanafiah, Way Foong Lim
Publikováno v:
Journal of Physics: Conference Series. 1535:012042
In this work, aluminium nitride (AlN) single layer has been successfully grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at low reactor pressure. The effects of growth temperature, ammonia (NH3) flux and trimethylalumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed3092692f4a405670baa94e2a572db
https://doi.org/10.1088/1742-6596/1535/1/012042
https://doi.org/10.1088/1742-6596/1535/1/012042
Autor:
James S. Speck, Abdullah I. Alhassan, Ezzah Azimah Alias, Michael Iza, S. Nakamura, Steven P. DenBaars, M. E. A. Samsudin, Norzaini Zainal
Publikováno v:
Journal of Physics: Conference Series. 1535:012056
This work demonstrates that standing transparent mirrorless LED packaging as an attractive alternative configuration to increase the light extraction of LED on GaN substrate rather than standard planar-mounted packaging. From comparison study, it was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35dac336aebd762607ed5225f6e05e23
https://doi.org/10.1088/1742-6596/1535/1/012056
https://doi.org/10.1088/1742-6596/1535/1/012056
Autor:
James S. Speck, Abdullah I. Alhassan, Steven P. DenBaars, Asad J. Mughal, Michel Khoury, Bastien Bonef, Ezzah Azimah, Hongjian Li, Philippe De Mierry, M. E. A. Samsudin, Shuji Nakamura
Publikováno v:
ACS applied materialsinterfaces. 9(41)
We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dffe8601995f3de0dfe09c4d30163aea
https://pubmed.ncbi.nlm.nih.gov/28960058
https://pubmed.ncbi.nlm.nih.gov/28960058
Publikováno v:
Materials Research Express. 6:066403
This work describes crystal and surface properties of a ScN interlayer, which was deposited on GaAs substrate with successive ammonia annealing at different temperature; 700 °C, 800 °C, 850 °C and 900 °C. The crystal and surface of the ScN interl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e6c2e13e7a5a54ef690e7ce57c10a1a
https://doi.org/10.1088/2053-1591/ab0a8b
https://doi.org/10.1088/2053-1591/ab0a8b
Publikováno v:
Materials Research Express; Aug2019, Vol. 6 Issue 8, p1-1, 1p
Publikováno v:
Materials Research Express; 6/6/2019, Vol. 6 Issue 6, p1-1, 1p