Zobrazeno 1 - 10
of 57
pro vyhledávání: '"M. Deschler"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Applied Surface Science. 188:450-455
A non-contact atomic force microscope (NC-AFM) based on a microfabricated piezoelectric cantilever is presented. A single piezoelectric lead zirconate titanate thin film layer on the cantilever serves as deflection sensing, cantilever oscillation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8b3f41b77a1cd102352a40d2860bba
https://doi.org/10.1016/s0169-4332(01)00929-1
https://doi.org/10.1016/s0169-4332(01)00929-1
Autor:
E. Woelk, R. Beccard, Michael Heuken, Yu.N. Makarov, M. Deschler, D. Schmitz, G. Strauch, Holger Juergensen
Publikováno v:
Materials Science and Engineering: B. :314-319
Silicon Carbide is presently gaining much attention as a material for high temperature, high speed and high power devices. However, fabricating epitaxial SiC or GaN films is still a challenge since very high growth temperatures (up to 1600°C) must b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7afc2ffdd6070addee451450587fb1a9
https://doi.org/10.1016/s0921-5107(98)00525-x
https://doi.org/10.1016/s0921-5107(98)00525-x
Publikováno v:
Metallurgical and Materials Transactions A. 30:1047-1051
Rapid growth of conducting or insulating InP, GaAs, Ga0.47In0.53As, and GaAs0.6P0.4 on one or more of substrates of orientations (001), (110), (111)A, (311)A, and (311)B by hydride vapor phase epitaxy (HVPE) is demonstrated. The maximum growth rate o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc9660eac50e2ac95e57d2afe57b8a56
https://doi.org/10.1007/s11661-999-0157-y
https://doi.org/10.1007/s11661-999-0157-y
Publikováno v:
Integrated Ferroelectrics. 21:381-384
Metalorganic chemical vapor deposition (MOCVD) has been established as the most favoured method for the processing of (Ba, Sr)TiO3, Pb(Zr, Ti)O3 and SrBi2Ta2O9 thin films. Due to good step coverage, uniformity of thickness and composition as well as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aefe597e7fa7d32574a0a581e98e0af3
https://doi.org/10.1080/10584589808202078
https://doi.org/10.1080/10584589808202078
Autor:
Michael Heuken, J. Albert, W. Taudt, A. Bauknecht, M. Saad, T. Kampschulte, Holger Kalisch, J. Söllner, H. Hamadeh, Ulf Blieske, M. Deschler, Holger Jürgensen, M.Ch. Lux-Steiner
Publikováno v:
Journal of Crystal Growth. :158-162
The growth of II–VI semiconductors is performed in MOCVD systems (AIX 200 and AIX 200/4) with a capacity of one 2 in and one 4 in wafer or equivalent, respectively, on 2 in substrates. The growth of ZnSe, ZnSSe and ZnMgSSe has been carried out with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a11f49459970ab57080e9ecd920d49
https://doi.org/10.1016/s0022-0248(98)80314-x
https://doi.org/10.1016/s0022-0248(98)80314-x
Publikováno v:
Materials Science and Engineering: B. 50:1-7
We present results on the growth of Ga–In–Al–N films in multiwafer Planetary Reactors® with 7×2 in. wafer capacity. The unique design of these reactors allows us to combine high efficiency (Ga efficiency in GaN around 30%) and excellent unifo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3819a2da79fe4429949c70b2c4cc35
https://doi.org/10.1016/s0921-5107(97)00198-0
https://doi.org/10.1016/s0921-5107(97)00198-0
Publikováno v:
Integrated Ferroelectrics. 18:119-125
The need for ferroelectric capacitors and FRAMs is rapidly increasing as world wide communication networks are being erected and a higher integration of memory chips will be introduced in the next few years. To meet the demand for economical producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9b18b7199508186befb348cabac55ed
https://doi.org/10.1080/10584589708221692
https://doi.org/10.1080/10584589708221692
Publikováno v:
Materials Science and Engineering: B. 44:419-422
The worldwide demand for ultra-high-brightness blue and green LEDs has driven the development of MOCVD for Al-Ga-In-N alloy systems towards efficient multiwafer technology. This new MOCVD approach has been developed using a unique growth initiation c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::600a41cc0e6be46c490253c26872eca0
https://doi.org/10.1016/s0921-5107(96)01782-5
https://doi.org/10.1016/s0921-5107(96)01782-5
Publikováno v:
Materials Science and Engineering: B. 43:228-236
Copyright (c) 1997 Elsevier Science S.A. All rights reserved. The worldwide demand for ultra-high-brightness blue and green light emitting devices (LEDs) has driven the development of metalorganic chemical vapor deposition (MOCVD) for Al−Ga−In−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0210c70e99c6e3c7cc8839ab7be22a
https://doi.org/10.1016/s0921-5107(96)01873-9
https://doi.org/10.1016/s0921-5107(96)01873-9