Zobrazeno 1 - 10
of 40
pro vyhledávání: '"M. David Henry"'
Autor:
Samantha T. Jaszewski, Eric R. Hoglund, Anna Costine, Marc H. Weber, Shelby S. Fields, Maria Gabriela Sales, Jaykumar Vaidya, Leah Bellcase, Katie Loughlin, Alejandro Salanova, Diane A. Dickie, Steven L. Wolfley, M. David Henry, Jon-Paul Maria, Jacob L. Jones, Nikhil Shukla, Stephen J. McDonnell, Petra Reinke, Patrick E. Hopkins, James M. Howe, Jon F. Ihlefeld
Publikováno v:
Acta Materialia. 244:118567
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d5f175cee1b16a99c4c23bad8b40103
https://doi.org/10.1016/j.actamat.2022.118567
https://doi.org/10.1016/j.actamat.2022.118567
Autor:
Samantha T. Jaszewski, Eric R. Hoglund, Anna Costine, Marc H. Weber, Shelby S. Fields, Maria Gabriela Sales, Jaykumar Vaidya, Leah Bellcase, Katie Loughlin, Alejandro Salanova, Diane A. Dickie, Steven L. Wolfley, M. David Henry, Jon-Paul Maria, Jacob L. Jones, Nikhil Shukla, Stephen J. McDonnell, Petra Reinke, Patrick E. Hopkins, James M. Howe, Jon F. Ihlefeld
Publikováno v:
Acta Materialia. 239:118220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637ef11bc3457a3da201061f824d0b9d
https://doi.org/10.1016/j.actamat.2022.118220
https://doi.org/10.1016/j.actamat.2022.118220
Publikováno v:
Semiconductor Technologies
In this chapter, we have described and explored some of the emerging plasma applications of etching, deposition, and surface modification to semiconductor materials. The process latitude available in modern ICP-RIE systems has enabled these novel pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25614914468027dd19ec04de071ecf61
http://www.intechopen.com/articles/show/title/advanced-plasma-processing-etching-deposition-and-wafer-bonding-techniques-for-semiconductor-applica
http://www.intechopen.com/articles/show/title/advanced-plasma-processing-etching-deposition-and-wafer-bonding-techniques-for-semiconductor-applica
Autor:
Michael T. Brumbach, John F. Conley, Melanie A. Jenkins, M. David Henry, Konner E. K. Holden, Joseph C. Woicik, Samantha T. Jaszewski, Jon F. Ihlefeld, Sean W. Smith, Conan Weiland
Publikováno v:
ACS applied materialsinterfaces. 13(12)
Doped ferroelectric HfO2 is highly promising for integration into complementary metal-oxide semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and low-power field-effect transistors (FETs). We report the direct measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9436b281f5eb20c7f664cb320068eba
https://pubmed.ncbi.nlm.nih.gov/33749229
https://pubmed.ncbi.nlm.nih.gov/33749229
Autor:
Jordan E. Gutierrez, John Mudrick, Shawn Arterburn, T. A. Friedmann, Lisa Caravello, Jonatan A. Sierra Suarez, Matthew B. Jordan, Crystal C. Sennett, M. David Henry
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
In this study we examine a split-foundry multilevel application specific integrated circuit (ASIC) Si-interposer and die bonded using the direct bond interface (DBI) process, in addition to shortloop vehicles. The designs have been subject to relaxed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c176b30d66ad4d984eddf2780f3fef
https://doi.org/10.1109/ectc32862.2020.00304
https://doi.org/10.1109/ectc32862.2020.00304
Akademický článek
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Autor:
Chris M. Fancher, Paul Davids, M. David Henry, Patrick E. Hopkins, Diane A. Dickie, Giovanni Esteves, David H. Olson, Shelby S. Fields, Jon F. Ihlefeld, Sean W. Smith, Samantha T. Jaszewski
Publikováno v:
Applied Physics Letters. 119:129901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d3e2d7451c991c65957ebe724333539
https://doi.org/10.1063/5.0068886
https://doi.org/10.1063/5.0068886
Autor:
Nancy A. Missert, Matthäus A. Wolak, M. David Henry, Erik P. DeBenedictis, Michael P. Frank, Rupert Lewis
Publikováno v:
2019 IEEE International Superconductive Electronics Conference (ISEC).
In an ongoing project at Sandia National Laboratories, we are attempting to develop a novel style of superconducting digital processing, based on a new model of reversible computation called Asynchronous Ballistic Reversible Computing (ABRC). We envi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29f2035b5be703b16f4e90cd54ecc41
https://doi.org/10.1109/isec46533.2019.8990900
https://doi.org/10.1109/isec46533.2019.8990900
Autor:
Matthew B. Jordan, John Mudrick, Jonatan A. Sierra-Suarez, T. A. Friedmann, Robert L. Jarecki, M. David Henry
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Direct bond interconnect (DBI) processes enable chip to chip, low resistivity electrical connections for 2.5-D scaling of electrical circuits and heterogenous integration. This work describes SiO2/Cu DBI technology with Cu interconnect performance in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0819678b94dd9c558a13727da626691b
https://doi.org/10.1109/ectc.2019.00103
https://doi.org/10.1109/ectc.2019.00103
Autor:
M. David Henry, Chris M. Fancher, David H. Olson, Paul Davids, Giovanni Esteves, Diane A. Dickie, Samantha T. Jaszewski, Jon F. Ihlefeld, Sean W. Smith, Shelby S. Fields, Patrick E. Hopkins
Publikováno v:
Applied Physics Letters. 118:102901
The elastic moduli of amorphous and crystalline atomic layer-deposited Hf1-xZrxO2 (HZO, x = 0, 0.31, 0.46, 0.79, 1) films prepared with TaN electrodes on silicon substrates were investigated using picosecond acoustic measurements. The moduli of the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0c186f38daa0b0ad3892ddf065d0cc
https://doi.org/10.1063/5.0044702
https://doi.org/10.1063/5.0044702