Výsledky vyhledávání

Low-temperature deposition of weakly-stressed nanocrystalline silicon films by reactive magnetron sputtering

Autor: A. Ben Othman, Y. Leconte, Richard Rizk, M. Daouahi, Xavier Portier, C. Goncalves, P. Marie, Habib Bouchriha, K. Zellama

Publikováno v: The European Physical Journal Applied Physics. 29:33-38

We discuss the fabrication and characterization of undoped hydrogenated and crystallized silicon thin films grown by reactive magnetron sputtering at growth rate of about 2 A/s and at a temperature as low as 100 °C for various ratios of hydrogen dil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6e4c4c62e3e8482f1d7a203d0d9b7f9
https://doi.org/10.1051/epjap:2004207

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Effect of the hydrogen dilution on the short-range and intermediate-range-order in radiofrequency magnetron sputtered hydrogenated amorphous silicon films

Autor: K. Zellama, Habib Bouchriha, J. Henocque, A. Ben Othman, M. Daouahi

Publikováno v: The European Physical Journal Applied Physics. 28:19-26

Raman spectroscopy experiments correlated with infrared absorption, optical transmission and photothermal deflection spectroscopy ones are used to investigate in detail the short-range-order (SRO) and intermediate-range-order (IRO) in hydrogenated am

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e54e8af9e5921c553c5998a0cf7d860
https://doi.org/10.1051/epjap:2004158

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Effect of the Nature of the Hydrogen Bonding on the Light-Induced Metastable Defects in Hydrogenated Amorphous Silicon Prepared by Radiofrequency Magnetron Sputtering

Autor: L. Chahed, A. Ben Othman, M. Daouahi, M. Essamet, H. Bouchriha, K. Zellama

Publikováno v: physica status solidi (b). 231:373-384

The effects of the nature of the hydrogen bonding and distribution on light-induced metastable defects are investigated in detail in a-Si:H films deposited by radiofrequency magnetron sputtering at high rates (∼15 A/s) with different hydrogen dilut

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a465a2e505a4536e65b233482d7d4ff2
https://doi.org/10.1002/1521-3951(200206)231:2<373::aid-pssb373>3.0.co

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Effect of light soaking and annealing on the stability of hydrogenated amorphous silicon films deposited using pure and highly helium diluted silane

Autor: K. Zellama, L. Chahed, M. Daouahi, P. Roca i Cabarrocas, N Souffi

Publikováno v: Solid State Communications. 122:259-264

We present a comparative study of the effects of the light soaking and annealing on the density of deep defect states, the width of valence-band tail (Urbach tail) and the refractive index of two different types of undoped hydrogenated amorphous sili

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae64c238e70a22f9a3cbf6482e0fa6fb
https://doi.org/10.1016/s0038-1098(02)00121-7

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Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films

Autor: Andreas Zeinert, A Ben Othmane, Habib Bouchriha, M. Essamet, M. Daouahi, K. Zellama

Publikováno v: Solid State Communications. 120:243-248

Infrared absorption and optical transmission combined with photothermal deflection spectroscopy experiments have been used to study the effect of the hydrogen bonding and content on the opto-electronic properties of hydrogenated amorphous silicon (a-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dc44a1be346639a8350382fbbe719266
https://doi.org/10.1016/s0038-1098(01)00350-7

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Effect of the hydrogen dilution on the local microstructure in hydrogenated amorphous silicon films deposited by radiofrequency magnetron sputtering

Autor: P. Elkaïm, H. Bouchriha, M. Daouahi, K. Zellama

Publikováno v: The European Physical Journal Applied Physics. 10:185-191

The nature of the hydrogen bonding and content and their influence on the film microstructure have been investigated in detail, as a function of the H 2 dilution and the residual pressure, in hydrogenated amorphous silicon (a-Si:H) films prepared by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::648aac82c12e2761b662f18871cc91e3
https://doi.org/10.1051/epjap:2000131

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Influence of the deposition conditions on the optoelectronic properties of R.F. magnetron sputtered a-Si:H films

Autor: M. Daouahi, P. Elkaïm, J. Dixmier, H. Bouchriha, K. Zellama

Publikováno v: The European Physical Journal Applied Physics. 1:301-304

We have studied the effect of the deposition conditions on the hydrogen incorporation modes and content and their effects on the optoelectronic properties of three different series of a-Si:H films prepared by R.F. magnetron sputtering at high substra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b5ff3d21d6ddcecf52d8b57c753d01e
https://doi.org/10.1051/epjap:1998150

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