Zobrazeno 1 - 10
of 43
pro vyhledávání: '"M. D. Vilisova"'
Publikováno v:
Semiconductors. 53:1724-1730
The phase diagrams of the InxAl1 –xN solid solutions and conditions for their growth by magnetron sputtering and molecular beam and metalorganic vapor phase epitaxy are analyzed. The mutual equilibrium solubility in a wide range of compositions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efdd15af18f6d535bc84dd5fe845ed14
https://doi.org/10.1134/s1063782619160061
https://doi.org/10.1134/s1063782619160061
Publikováno v:
Russian Physics Journal. 61:1450-1456
Experimental data on studying ohmic contacts based on single-layer and multilayer metallizations on GaN and (In, Al, Ga)N solid solutions are analyzed. The contact resistance of the Ti/Al/Mo/Au and Ti/Al/Mo/W/Au metallizations on undoped GaN is studi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f18013ccb77027ff724cfd89ab38830a
https://doi.org/10.1007/s11182-018-1555-7
https://doi.org/10.1007/s11182-018-1555-7
Publikováno v:
Russian Physics Journal. 61:1160-1166
The phase diagrams and the results of studies of the GaN, AlN and InN ternary solid solutions grown using the magnetron sputtering, molecular beam epitaxy, and metalorganic vapour-phase epitaxy technologies and intended for the production of ultrahig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d563ddb9aae4c9236cf137d4d6300fc7
https://doi.org/10.1007/s11182-018-1511-6
https://doi.org/10.1007/s11182-018-1511-6
Publikováno v:
Semiconductors. 42:238-241
Diffusion of Cr into epitaxial GaAs in an open system in the temperature range of 750–850°C was studied. Temperature dependences of the diffusion coefficient and solubility of Cr in GaAs were determined. Temperature dependences of the diffusion co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fcec947519055ca05d320f2394699a
https://doi.org/10.1134/s106378260802022x
https://doi.org/10.1134/s106378260802022x
Autor:
V. V. Chaldyshev, I. A. Bobrovnikova, M. D. Vilisova, L. G. Lavrentieva, V. V. Preobrazhenskii, I. V. Ivonin
Publikováno v:
Russian Physics Journal. 49:1334-1343
The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd3ffaadf134750239fcea405f7ad33e
https://doi.org/10.1007/s11182-006-0263-x
https://doi.org/10.1007/s11182-006-0263-x
Autor:
E. P. Drugova, M. A. Lelekov, V. A. Chubirko, O. P. Tolbanov, D. Yu. Mokeev, M. D. Vilisova, I. V. Ponomarev, L.P. Porokhovnichenko, G. I. Ayzenshtat
Publikováno v:
Technical Physics. 51:1008-1011
Two types of photovoltaic X-ray detectors based on intrinsic and chromium-compensated epitaxial gallium arsenide are studied. The amplitude spectra taken with different radioactive sources show that the efficiency of charge collection in these detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cae211f2323e31a9ccbaf79d4468597
https://doi.org/10.1134/s1063784206080093
https://doi.org/10.1134/s1063784206080093
Autor:
M. D. Vilisova, L. G. Lavrent'eva, I. A. Bobrovnikova, S. V. Subach, V. V. Preobrazhenskii, I. V. Ivonin, S. E. Toropov, B. R. Semyagin, Mikhail A. Putyato
Publikováno v:
Semiconductors. 37:1047-1052
The effect of dopant concentration and growth-surface crystallographic orientation on the incorporation of Si into Ga and As sublattices was investigated during GaAs molecular-beam epitaxy. The epitaxial layers (epilayers) were grown on GaAs substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbe9f590aa0cb0d1979e4e2d76919b3
https://doi.org/10.1134/1.1610116
https://doi.org/10.1134/1.1610116
Autor:
V. V. Preobrazhenskii, M. D. Vilisova, S. E. Toropov, L. G. Lavrent'eva, A. E. Kunitsyn, Mikhail A. Putyato, B. R. Semyagin, V. V. Chaldyshev
Publikováno v:
Semiconductors. 36:953-957
Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b86fe34e8a028d819e7ea7b29f9039
https://doi.org/10.1134/1.1507270
https://doi.org/10.1134/1.1507270
Publikováno v:
Crystallography Reports. 47:S118-S127
A nontraditional approach to the control of GaAs properties via the introduction of an excessive amount of arsenic during growth of epitaxial layers under conditions of low-temperature molecular-beam epitaxy (LT-GaAs layers) is considered. The influe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38bc2faf60840789c5da3a108909b53c
https://doi.org/10.1134/1.1529966
https://doi.org/10.1134/1.1529966
Publikováno v:
Russian Physics Journal. 45:735-752
The present paper reviews works devoted to control over the properties of epitaxial GaAs by incorporation of excess (non-stoichiometric) arsenic into the GaAs films grown by molecular-beam epitaxy (MBE) at low-temperature (LT). The effect of excess a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c37be85efc6de8efaba03f6e6491b5f7
https://doi.org/10.1023/a:1021965211576
https://doi.org/10.1023/a:1021965211576