Výsledky vyhledávání - "M. D. Nijkerk"

Spectrometry: photon sorting at the speed of light

Autor: H.J.P. Vink, J. P. R. Day, M. D. Nijkerk, Jean-Baptiste Volatier

Publikováno v: Mazuray, L.Wartmann, R.Wood, A.P., Proceedings Optical Systems Design 2015, Optical Design and Engineering VI, 7 September 2015, Jena, Germany

The fact that every spectrometer can sort light by wavelength at the speed of light is intriguing. The field of spectrometry is a long-existing and ever-changing one. The application areas extend from optical communication to possible extraterrestria

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Stochastic Coulomb interactions in space charge limited electron emission

Autor: M. D. Nijkerk, P. Kruit

Publikováno v: Journal of Applied Physics, 5, 96, 2985-2989

A Monte Carlo simulation tool, which was used to evaluate the influence of discrete space charge effects on self-consistent calculations of cathode-ray tube optics, was discussed. It was found that interactions in the space charge cloud affect the el

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https://doi.org/10.1063/1.1777395

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Freeform design and fabrication: where the proof of the pudding is in verification

Autor: M. D. Nijkerk, G. P. H. Gubbels, O. E. van der Togt-Marinescu

Publikováno v: International Conference on Space Optics, ICSO 2010, 4-8 October 2010, Rhodes, Greece

A freeform optical surface is typically defined as any surface that does not have an axis of rotational symmetry. These surfaces provide additional degrees of freedom that can lead to improved performance compared to systems that make use solely of c

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Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness

Autor: George P. Patsis, Evangelos Gogolides, Leonardus H. A. Leunissen, George Kokkoris, M. D. Nijkerk, Ioannis Raptis, D. Drygiannakis

Publikováno v: SPIE Proceedings.

Device shrinking combined with material manipulation under various process conditions becomes a difficult task if specific optimization conditions should be met. Nanolithography is limited by effects as line-edge and line-width roughness (LER and LWR

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https://doi.org/10.1117/12.708847

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High throughput defect detection with multiple parallel electron beams

Autor: T. C. Hosman, H. M. P. van Himbergen, M. D. Nijkerk, P. W. H. de Jager, P. Kruit

Publikováno v: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 6, 25, 2521-2525

A new concept for high throughput defect detection with multiple parallel electron beams is described. As many as 30 000 beams can be placed on a footprint of a in.2, each beam having its own microcolumn and detection system without cross-talk. Based

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Simulation of material and processing effects on photoresist line-edge roughness

Autor: M. D. Nijkerk, Leonardus H. A. Leunissen, E. Gogolides, G. P. Patsis

Publikováno v: International Journal of Computational Science and Engineering. 2:134

Sub-100 nm device fabrication rules require extremely tight control of Line-Edge Roughness (LER) of patterned structures. During lithographic processes the resist film introduces an initial LER due to its chemical structure and processing. This initi

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https://doi.org/10.1504/ijcse.2006.012765

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