Zobrazeno 1 - 3
of 3
pro vyhledávání: '"M. D. Gorwitz"'
Autor:
R. L. Forrest, T. A. Strand, T. J. deLyon, Scott M. Johnson, M. D. Gorwitz, C. D. Moore, Mark S. Goorsky, D. B. Leonard, T. T. Lam
Publikováno v:
Journal of Electronic Materials. 29:804-808
Shear strain is present in Hg0.68Cd0.32Te epitaxial layers grown by molecular beam epitaxy on (211)-oriented Cd1−yZnyTe substrates. Differences in the substrate zinc composition led to lattice mismatch between the epitaxial layer and the substrate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155c4703c6ccad9d1307b964406ca0cc
https://doi.org/10.1007/s11664-000-0228-8
https://doi.org/10.1007/s11664-000-0228-8
Autor:
E. A. Patten, Jeffrey M. Peterson, D. B. Leonard, Valerie Randall, M. D. Gorwitz, J. H. Durham, T. J. deLyon, Scott M. Johnson, T. A. Strand, W. J. Hamilton, J. L. Johnson, J. E. Jensen
Publikováno v:
Journal of Electronic Materials. 29:680-686
As the number of bands and the complexity of HgCdTe multicolor structures increases, it is desirable to minimize the lattice mismatch at growth interfaces within the device structure in order to reduce or eliminate mismatch dislocations at these inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6b2d9894af80fe635c19f2e28ca009
https://doi.org/10.1007/s11664-000-0205-2
https://doi.org/10.1007/s11664-000-0205-2
Publikováno v:
Journal of Electronic Materials. 28:705-711
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0bb4c4c6a3bfc12348734d0c167738
https://doi.org/10.1007/s11664-999-0058-2
https://doi.org/10.1007/s11664-999-0058-2