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pro vyhledávání: '"M. Cuneyt Haciismailoglu"'
Autor:
M. Cuneyt Haciismailoglu, Muhitdin Ahmetoglu, Murside Haciismailoglu, Mursel Alper, Tugce Batmaz
Publikováno v:
Sensors and Actuators A: Physical. 347:113931
Fe26.7M26.7Ga15.6Mn20Si11 (M=Co, Ni) high entropy alloy (HEA) thin films were prepared using a thermal evaporation method. The structural, magnetic, electrical and magnetoresistance properties of FeMGaMnSi amorphous HEA thin films were investigated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::000d7e48494ad2009b444252f6d6c9d8
http://hdl.handle.net/11452/30326
http://hdl.handle.net/11452/30326
Akademický článek
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Publikováno v:
Expert Systems with Applications. 36:3188-3190
This paper presents all artificial neural network approach based oil dynamic Preisach model to compute hysteresis loops of nano-crystalline cores. The network has been trained by a Levenberg-Marquardt learning algorithm. The model is fast and does no
Ultrathin polypyrrole (PPy) films with the thicknesses of 20, 50, and 100 nm were prepared by electropolymerization. Co particles with a charge density in the range of 125–1,250 mC cm−2 were grown on these ultrathin PPy films. Current time transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21820b339c7476331eab61fe5bb55013
https://aperta.ulakbim.gov.tr/record/64793
https://aperta.ulakbim.gov.tr/record/64793
Dynamic hysteresis loops of a range of nano-crystalline cores have been obtained over a wide frequency range (1-50 kHz). A dynamic hysteresis model front measurements using an artificial neural network trained by the delta-bar-delta learning algorith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::462e65dbe1cd0976cb793643410df972
http://hdl.handle.net/11452/23167
http://hdl.handle.net/11452/23167
Publikováno v:
Expert Systems with Applications.
Publikováno v:
AIP Conference Proceedings.
n‐type (100) oriented Si0.76Ge0.24 samples used in this work were grown by silicon molecular beam epitaxy (Si‐MBE). The formation of Schottky junction is made by deposition Pt on n‐Si0.76Ge0.24. The electrical properties of Pt/n‐Si0.76Ge0.24/
Bu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur. We report on n-type (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd02ddcca5439e859d5166aaa869584a
http://hdl.handle.net/11452/22708
http://hdl.handle.net/11452/22708