Zobrazeno 1 - 10
of 155
pro vyhledávání: '"M. Cukr"'
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 185:184-187
Photoelectron diffraction was used to get polar plots of the low-energy photoemission intensities from AlAs monolayer buried 2, 3 and 4 GaAs monolayers below the GaAs(0 0 1)- c (4×4) reconstructed surface. Unexpected differences in polar plots of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034918a708145d7c72dfbf72ecf5f16a
https://doi.org/10.1016/j.elspec.2012.06.011
https://doi.org/10.1016/j.elspec.2012.06.011
Autor:
A. P. Wijnheijmer, Václav Holý, Tomas Jungwirth, Václav Novák, Xavier Marti, M. Cukr, PM Paul Koenraad
Publikováno v:
Applied Physics Letters, 100(11):112107, 112107-1/4. American Institute of Physics
Applied Physics Letters
Applied Physics Letters
We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage exposed only the InAs(110) non-polar planes, the cleavage continu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c07373d2b6996ba831acb5a0c2a3e013
https://research.tue.nl/en/publications/04613ec4-0713-4206-9e49-fe8ee2d4533a
https://research.tue.nl/en/publications/04613ec4-0713-4206-9e49-fe8ee2d4533a
Publikováno v:
Surface Science. 603:3088-3093
We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam epitaxy (MBE) using As-4 and As-2 molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b138766ff0ea9b206ab4ea9bbb7480d
https://doi.org/10.1016/j.susc.2009.08.021
https://doi.org/10.1016/j.susc.2009.08.021
Publikováno v:
Microelectronic Engineering. 86:561-564
We prepared constrictions on ferromagnetic GaMnAs layer by the local anodic oxidation (LAO) using the atomic force microscope (AFM). These oxide lines, produced by the negatively biased AFM tip, formed the electrical barrier to the conducting holes i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f84f7e6d2eba396a3bbea57b50a7b68c
https://doi.org/10.1016/j.mee.2008.11.035
https://doi.org/10.1016/j.mee.2008.11.035
Publikováno v:
Microelectronics Journal. 40:697-705
The results of local anodic oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low-temperature molecular beam epitaxy (MBE) growth in a Veeco Mod Gen II machine. The LAO process was performed with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feaad656e1219dd92ea4800f22169874
https://doi.org/10.1016/j.mejo.2008.07.039
https://doi.org/10.1016/j.mejo.2008.07.039
Publikováno v:
Journal of Crystal Growth. 311:2151-2154
Low temperature annealing of GaMnAs layers has been established as a standard tool for improvement of their magnetic and transport properties. We report on a strong enhancement of the annealing efficiency achieved by chemical removal of the surface o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df8cc0c5d5cb9018769bf0eedd4690d2
https://doi.org/10.1016/j.jcrysgro.2008.10.051
https://doi.org/10.1016/j.jcrysgro.2008.10.051
Autor:
K. Olejník, M. Cukr, Vít Novák, E. Busetto, Miloš Kopecký, Zbyněk Šourek, Andrea Lausi, J. Kub, Jonathan P. Wright
Publikováno v:
Journal of Applied Crystallography. 41:544-547
The local atomic structure of a Ga1−xMnxAs (x= 0.07) layer during the annealing process was studied by means of X-ray diffuse scattering. The difference between the pair-distribution functions before and after annealing indicated the fraction of at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a410e58fdbc09b849db2a07a1a31715d
https://doi.org/10.1107/s0021889808007309
https://doi.org/10.1107/s0021889808007309
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 20:457-460
We have carried out mid-infrared magneto-optical studies of Ga1−x Mn x As films grown using two different techniques: low temperature molecular beam epitaxy (LT-MBE) and a combination of ion-implantation and pulsed laser melting (II-PLM). The secon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff91425cdb1f56ec3a73ef8db8351957
https://doi.org/10.1007/s10948-007-0246-3
https://doi.org/10.1007/s10948-007-0246-3
Autor:
Vít Novák, E. Busetto, K. Olejník, Miloš Kopecký, M. Cukr, Jonathan P. Wright, J. Kub, Andrea Lausi, Jan Fábry
Publikováno v:
Journal of Applied Crystallography. 39:735-738
A three-dimensional image of the local neighbourhood of Mn atoms in a Ga1−xMnxAs (x= 0.02) layer has been obtained by using X-ray diffuse scattering holography. The first and second nearest neighbours of the Mn atoms correspond to the local structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c61bf8645f02f4b4550bb6f1bf829b87
https://doi.org/10.1107/s0021889806029748
https://doi.org/10.1107/s0021889806029748
Publikováno v:
Surface Science. 600:3646-3649
The electronic structure of (GaAs)2/(AlAs)2(1 0 0)-c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20–38 eV. Four samples with different surface termination laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e4f7dde074b4a195bc176b9a849064
https://doi.org/10.1016/j.susc.2006.01.069
https://doi.org/10.1016/j.susc.2006.01.069