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pro vyhledávání: '"M. Calligaro"'
Akademický článek
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Autor:
M.. Calligaro, Laurent Lombez, Delphine Lagarde, M. Krakowski, Olivier Gilard, Olivier Gauthier-Lafaye, Xavier Marie, S. Bonnefont, F. Lozes-Dupuy, Michel Lecomte, F.-J.. Vermersch, M. Boutillier, O.. Parillaud
Publikováno v:
IEEE Transactions on Nuclear Science. 54:1110-1114
852-nm emitting Al-free laser diodes and layers constituting the device are irradiated with 1-MeV electrons at fluences ranging from 1014 up to 1016e-/cm2. Layers corresponding to the laser diodes materials were characterised using photoluminescence
Autor:
Salvatore, S. Maggiore, U.L.R. Athanasiou, S. Origoni, M. Candiani, M. Calligaro, A. Zerbinati, N.
Objective Microablative fractional CO2 laser has been proven to determine tissue remodeling with neoformation of collagen and elastic fibers on atrophic skin. The aim of our study is to evaluate the effects of microablative fractional CO2 laser on po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::5ca57f3aed27721782ab72154b63be00
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3125015
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3125015
Autor:
Benjamin Damilano, Jean Massies, Jean-Luc Reverchon, Jean-Yves Duboz, S. Dalmasso, M. Calligaro, L. Siozade, Joël Leymarie, Nicolas Grandjean
Publikováno v:
physica status solidi (a). 180:363-368
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition
Publikováno v:
Journal of Electronic Materials. 28:1440-1443
The effect of rapid thermal annealing (RTA) on Ni/Au contacts on P-type GaN was investigated in terms of surface morphology and diffusion depth of metallic species. Ni/Au contacts were evaporated on the P-type 0.5 µm thick top layer of a GaN P/N hom
Publikováno v:
Chemie Ingenieur Technik. 73:648-648
Autor:
J P Reithmaier, A Somers, S Deubert, R Schwertberger, W Kaiser, A Forchel, M Calligaro, P Resneau, O Parillaud, S Bansropun, M Krakowski, R Alizon, D Hadass, A Bilenca, H Dery, V Mikhelashvili, G Eisenstein, M Gioannini, I Montrosset, T W Berg
Publikováno v:
Journal of Physics D: Applied Physics; Jul2005, Vol. 38 Issue 13, p2088-2102, 15p
Publikováno v:
Electronics Letters. 28:371
Millimetre-wave pin diodes have been developed for the first time in a flipchip structure, to achieve repeatability in the device features. GaAs flipchip pin diodes were manufactured on a semi-insulating substrate, and bondpads were located on mesas
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (1), pp.41-45. ⟨10.1051/rphysap:0197700120104100⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1977, 12 (1), pp.41-45. ⟨10.1051/rphysap:0197700120104100⟩
Les coefficients d'émission thermique des porteurs majoritaires et les énergies d'activation des centres créés par déformation plastique et par trempe du silicium sont mesurés par la méthode thermo-capacitive.