Zobrazeno 1 - 4
of 4
pro vyhledávání: '"M. C. van der Krogt"'
Autor:
André Vantomme, Sebastien Couet, A. L. La Rooij, Robert J. C. Spreeuw, M. C. van der Krogt, Kristiaan Temst
Publikováno v:
Journal of Applied Physics, 124(4):044902. American Institute of Physics
Journal of Applied Physics, 124(4)
Journal of Applied Physics, 124(4)
We report on the epitaxial growth and the characterization of thin FePt films and the subsequent patterning of magnetic lattice structures. These structures can be used to trap ultracold atoms for quantum simulation experiments. We use Molecular Beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b892ba0576b0806c42687de9ea6a5d6
https://dare.uva.nl/personal/pure/en/publications/deposition-and-patterning-of-magnetic-atom-trap-lattices-in-fept-films-with-periods-down-to-200-nm(9152d13d-3142-4061-8901-00ab752547ef).html
https://dare.uva.nl/personal/pure/en/publications/deposition-and-patterning-of-magnetic-atom-trap-lattices-in-fept-films-with-periods-down-to-200-nm(9152d13d-3142-4061-8901-00ab752547ef).html
Autor:
Pasqualina M. Sarro, I.T. Young, Yuval Garini, M.W. Docter, Andre Bossche, O.M. Piciu, M. C. van der Krogt
Publikováno v:
Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems. 221:107-114
This paper reports on the improved fabrication process and the optical characterization of different nano-hole arrays in thin metal films that are to be integrated into a novel atto-litre titre plate device for high-speed molecular analysis, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6de710d24a698dd101de8d4b9bc813e6
https://doi.org/10.1243/17403499jnn102
https://doi.org/10.1243/17403499jnn102
Publikováno v:
Microelectronic Engineering. 84:822-824
Hydrogen silsesquioxane (HSQ) is a high-resolution negative-tone inorganic resist with an established resolution below 10nm. Using 100keV electron beam lithography, we report the achievement of isolated 6nm wide lines in 20nm thick HSQ layers on sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbb66a588d0bd1530f20dfb7bf98d1d8
https://doi.org/10.1016/j.mee.2007.01.022
https://doi.org/10.1016/j.mee.2007.01.022
Publikováno v:
Journal of micro/nanolithography, MEMS, and MOEMS
Nowadays, features with sizes smaller than 10 nm can be obtained with electron beam lithography. For such small structures, high exposure doses are required to stay away from the shot noise limit. We investigated the effect of high-dose electron expo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c6160c691cb79e27d7f12d884db4dfa
https://doi.org/10.1117/1.2841716
https://doi.org/10.1117/1.2841716